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Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
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10.1063/1.3634116
/content/aip/journal/jap/110/6/10.1063/1.3634116
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3634116

Figures

Image of FIG. 1.
FIG. 1.

(Color online) 2θ-ω HRXRD scanning curve of GaN films grown on sapphire substrate.

Image of FIG. 2.
FIG. 2.

(Color online) The XRC of the (002) and (121) GaN reflections.

Image of FIG. 3.
FIG. 3.

FE-SEM images of GaN sample grown on sapphire substrate with N/Ga ratios of (a) 18.8, (b) 29.4, and (c) 40.1. The inset shows the cross-sectional SEM.

Image of FIG. 4.
FIG. 4.

(Color online) (a) The room-temperature photoluminescence spectra of GaN films grown on sapphire substrate. The inset shows the normalized PL spectra. (b) Variation of FWHM and peak position of PL spectra with N/Ga ratio.

Image of FIG. 5.
FIG. 5.

(Color online) The room-temperature Raman spectra of GaN films grown on sapphire substrate with N/Ga ratios of (a) 18.8, (b) 29.4 and (c) 40.1. The inset shows the zoomed view of the E2 peak of GaN film along with substrate peaks.

Image of FIG. 6.
FIG. 6.

(Color online) The room-temperature I-V characteristics of Schottky diodes fabricated from GaN films grown on sapphire substrate with N/Ga ratios of (a) 18.8, (b) 29.4, and (c) 40.1. The inset shows the schematic diagram of the Schottky diode.

Image of FIG. 7.
FIG. 7.

(Color online) (a)–(c) Semi-log plots of I-V characteristics under forward bias.

Tables

Generic image for table
Table I.

The FWHM (deg.) of both symmetric and asymmetric X-ray rocking curves.

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/content/aip/journal/jap/110/6/10.1063/1.3634116
2011-09-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3634116
10.1063/1.3634116
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