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Electrical conduction processes in ZnO in a wide temperature range 20–500 K
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10.1063/1.3638120
/content/aip/journal/jap/110/6/10.1063/1.3638120
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3638120

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Logarithm of resistivity as a function of reciprocal temperature for as-grown ZnO single crystal between 110 and 500 K. The symbols are the experimental data and the solid curve is a least-squares fit to Eq. (1). The straight dashed and dotted lines are guides to the eye. Inset: Current-voltage curves at four temperatures of 490, 410, 370, and 130 K. Notice that the - characteristics are linear, i.e., ohmic.

Image of FIG. 2.
FIG. 2.

(Color online) Logarithm of resistivity as a function of reciprocal temperature for the as-grown (closed squares, taken from Fig. 1), first-cycled (open squares), second-cycled (closed circles), and third-cycled (open circles) ZnO single crystal. The solid curves are least-squares fits to Eq. (1).

Image of FIG. 3.
FIG. 3.

(Color online) Logarithm of resistivity as a function of reciprocal temperature for four ZnO polycrystalline films between 90 and 500 K, as indicated. The symbols are the experimental data and the solid curves are least-squares fits to Eq. (2).

Image of FIG. 4.
FIG. 4.

(Color online) Logarithm of resistivity as a function of for four ZnO polycrystalline films, as indicated. The symbols are the experimental data and the straight solid lines are least-squares fits to Eq. (3).

Tables

Generic image for table
Table I.

Relevant parameters of as-grown and thermally cycled ZnO single crystal. , , , and are defined in Eq. (1).

Generic image for table
Table II.

Values of relevant parameters for six oxygen deficient ZnO polycrystalline films. ( = 1, 2, 3) and are defined in Eq. (2). Notice that these samples are taken from Ref. 11 and remeasured from 500 K down. As a result of thermal cycling/annealing in this study, the resistivity values are lowered from those corresponding values originally reported in Ref. 11. (SCCM denotes cubic centimeters per minute at standard temperature and pressure.)

Generic image for table
Table III.

Values of relevant parameters for six oxygen deficient ZnO polycrystalline films. and are defined in Eq. (3). is the electronic density of states at the Fermi energy, is the average hopping distance, is the Bohr radius of the shallow donors, and is the average hopping energy. The values of were calculated for a representative temperature of 40 K.

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/content/aip/journal/jap/110/6/10.1063/1.3638120
2011-09-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical conduction processes in ZnO in a wide temperature range 20–500 K
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3638120
10.1063/1.3638120
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