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Fluctuation-induced tunneling conduction through RuO2 nanowire contacts
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10.1063/1.3638707
/content/aip/journal/jap/110/6/10.1063/1.3638707
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3638707

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Current-voltage curves at 1.6, 15, 30, 45, 60, 90, and 300 K for device A. The inset shows an expanded plot for the I-V curve at 1.6 K. (b) A schematic of a contacting Au electrode pair bridged with a single NW. The NW is directly placed on the surfaces of the Au electrodes. (c) An SEM image of device A. The scale bar is 2 μm.

Image of FIG. 2.
FIG. 2.

(Color online) Zero-bias resistance as a function of temperature for two NW devices, as indicated. The symbols are the experimental data. The solid curves are the least-squares fits to Eq. (1). The dashed curves are the theoretical predictions of the same equation but are plotted by directly substituting the and values extracted from (Eq. (5)). For clarity, the data for the device B have been shifted up by multiplying a factor of 2.

Image of FIG. 3.
FIG. 3.

(Color online) Current-voltage characteristics at high bias voltages for (a) device A and (b) device B at several temperatures, as indicated. The symbols are the experimental data. The solid curves are the least-squares fits to Eq. (4).

Image of FIG. 4.
FIG. 4.

(Color online) The parameter a in Eq. (4) as a function of temperature for devices A and B, as indicated. The solid curves are the least-squares fits to Eq. (5). The dashed curves are the theoretical predictions of the same equation, but plotted by directly substituting the and values extracted from the fits to Eq. (1).

Image of FIG. 5.
FIG. 5.

(Color online) Variation of saturation current with temperature for (a) devices A and (b) device B and variation of critical voltage with temperature for (c) device A and (d) device B. Notice that these two parameters are temperature independent within our experimental uncertainties.

Tables

Generic image for table
Table I.

Values of relevant parameters for two NW devices. Device A (B) has a NW diameter of 70 (100) nm. The junction (nanocontact) area was estimated from the SEM image and given by the product of the diameter of the NW and the average extent of the two Au contacting electrodes lying beneath the NW. The specific contact resistivity is defined by  =  and ( K). The intrinsic NW resistance for device A (B) is 2 ( 1) and weakly dependent on temperature, as determined by the four-probe method in Ref. 4. The total Au electrode resistances are 10 .

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/content/aip/journal/jap/110/6/10.1063/1.3638707
2011-09-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluctuation-induced tunneling conduction through RuO2 nanowire contacts
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3638707
10.1063/1.3638707
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