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Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes
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10.1063/1.3639287
/content/aip/journal/jap/110/6/10.1063/1.3639287
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3639287
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration of the ITO/GO/LiF/Al memory devices. (b) Typical current-voltage (I-V) characteristics of the ITO/GO/LiF/Al memory devices.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Experimental and fitted I-V curves of the ITO/GO/LiF/Al memory devices in the OFF state. The inset shows that the thermionic emission (TE) model is dominant at the initial stage. (b) Experimental and fitted I-V curves of the ITO/GO/LiF/Al memory devices in the ON state.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The AFM images of the LiF/GO film on ITO. (b) The AFM images of the GO film on ITO. (c) The SEM images of the LiF/GO film on ITO. The inset shows the cross-sectional view of the ITO/GO/LiF/Al memory devices.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Schematic illustration of the proposed WORM memory mechanism of the ITO/GO/LiF/Al memory devices in the OFF state. (b) Schematic illustration of the proposed WORM memory mechanism of the ITO/GO/LiF/Al memory devices in the ON state.

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/content/aip/journal/jap/110/6/10.1063/1.3639287
2011-09-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3639287
10.1063/1.3639287
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