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Integration of perovskite oxide dielectrics into complementary metal–oxide–semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier
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10.1063/1.3641636
/content/aip/journal/jap/110/6/10.1063/1.3641636
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3641636
/content/aip/journal/jap/110/6/10.1063/1.3641636
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/content/aip/journal/jap/110/6/10.1063/1.3641636
2011-09-30
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of perovskite oxide dielectrics into complementary metal–oxide–semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3641636
10.1063/1.3641636
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