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Photoemission characteristics of different-structure reflection-mode GaAs photocathodes
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10.1063/1.3642978
/content/aip/journal/jap/110/6/10.1063/1.3642978
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3642978

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Theoretical quantum yield of r-mode GaAs photocathodes’ changes with the interface recombination velocity S V , assuming the active-layer thickness T e = 1.6 μm.

Image of FIG. 2.
FIG. 2.

(Color online) Theoretical quantum yield of r-mode GaAs photocathodes’ changes with the active-layer thickness T e , assuming the interface recombination velocity S V = 106 cm/s.

Image of FIG. 3.
FIG. 3.

(Color online) Doping structure diagram of r-mode GaAs photocathode samples grown by MBE.

Image of FIG. 4.
FIG. 4.

(Color online) Experimental spectral response curves of the three samples.

Image of FIG. 5.
FIG. 5.

(Color online) Experimental (solid lines) and fitted (dashed lines) quantum yield curves for the three samples.

Image of FIG. 6.
FIG. 6.

Band structure and surface potential barrier of gradient-doping r-mode GaAlAs/GaAs photocathodes. E C is the conduction band minimum, E V is the valence band maximum, E F is the Fermi level, E 0 is the vacuum level, and BBR is the surface band-bending region.

Tables

Generic image for table
Table I.

Fitted performance parameters of the three samples.

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/content/aip/journal/jap/110/6/10.1063/1.3642978
2011-09-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoemission characteristics of different-structure reflection-mode GaAs photocathodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3642978
10.1063/1.3642978
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