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Electron and hole scattering in short-period InGaAs/InP superlattices
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10.1063/1.3646365
/content/aip/journal/jap/110/7/10.1063/1.3646365
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/7/10.1063/1.3646365
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectra (solid lines) vs energy measured in superlattices (In0.53Ga0.47As) m (InP) m with different periods at T = 10 K. The dash lines are the spectra calculated according to Eq. (2) as functions of the energy ω.

Image of FIG. 2.
FIG. 2.

Photoluminescence peak position (a) and optical broadening (b) measured as a function of the well width in superlattices (In0.53Ga0.47As) m (InP) m . The dash line shows the calculated variation of the gap energy, while the solid line demonstrates the optical broadening calculated according to Ref. 4.

Image of FIG. 3.
FIG. 3.

(a) Inverse single-particle relaxation time for electrons (τspe ) vs well width measured at T = 4.2 K by magnetoresistance oscillations (shown for the sample with m = 6 ML in the inset) in superlattices (In0.53Ga0.47As) m (InP) m with different well widths m. (b) Inverse single-particle relaxation time for holes (τsph ) extracted from Eq. (1) and Eq. (2) vs well width. The solid lines indicate the 1/L dependence.

Image of FIG. 4.
FIG. 4.

Inverse single-particle relaxation time (closed circles) and inverse transport scattering time (open circles) of electrons obtained in superlattices (In0.53Ga0.47As) m (InP) m with different well widths m. Insets show the temperature dependencies of resistances measured in superlattices with m = 7 ML and m = 25 ML. Solid (/τtre  ∼ 1/L) and dotted (/τtre  ∼ 1/L 6) lines represent remote impurity (RI) scattering and interface roughness (IR) scattering, respectively. The dash line was calculated for the interface-roughness scattering, including finite confinement and multiple scattering effects. All data were determined at a temperature of T = 4.2 K.

Image of FIG. 5.
FIG. 5.

Mobility measured at T = 4.2 K in differently doped superlattices (In0.53Ga0.47As)15 (InP)25 as a function of the electron concentration. The arrow indicates the electron concentration when the Fermi level enters the second miniband. The inset shows the superlattice miniband structure.

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/content/aip/journal/jap/110/7/10.1063/1.3646365
2011-10-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron and hole scattering in short-period InGaAs/InP superlattices
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/7/10.1063/1.3646365
10.1063/1.3646365
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