Photoluminescence spectra (solid lines) vs energy measured in superlattices (In0.53Ga0.47As) m (InP) m with different periods at T = 10 K. The dash lines are the spectra calculated according to Eq. (2) as functions of the energy ω.
Photoluminescence peak position (a) and optical broadening (b) measured as a function of the well width in superlattices (In0.53Ga0.47As) m (InP) m . The dash line shows the calculated variation of the gap energy, while the solid line demonstrates the optical broadening calculated according to Ref. 4.
(a) Inverse single-particle relaxation time for electrons (τspe ) vs well width measured at T = 4.2 K by magnetoresistance oscillations (shown for the sample with m = 6 ML in the inset) in superlattices (In0.53Ga0.47As) m (InP) m with different well widths m. (b) Inverse single-particle relaxation time for holes (τsph ) extracted from Eq. (1) and Eq. (2) vs well width. The solid lines indicate the 1/L dependence.
Inverse single-particle relaxation time (closed circles) and inverse transport scattering time (open circles) of electrons obtained in superlattices (In0.53Ga0.47As) m (InP) m with different well widths m. Insets show the temperature dependencies of resistances measured in superlattices with m = 7 ML and m = 25 ML. Solid (/τtre ∼ 1/L) and dotted (/τtre ∼ 1/L 6) lines represent remote impurity (RI) scattering and interface roughness (IR) scattering, respectively. The dash line was calculated for the interface-roughness scattering, including finite confinement and multiple scattering effects. All data were determined at a temperature of T = 4.2 K.
Mobility measured at T = 4.2 K in differently doped superlattices (In0.53Ga0.47As)15 (InP)25 as a function of the electron concentration. The arrow indicates the electron concentration when the Fermi level enters the second miniband. The inset shows the superlattice miniband structure.
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