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Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
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10.1063/1.3647782
/content/aip/journal/jap/110/7/10.1063/1.3647782
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/7/10.1063/1.3647782
/content/aip/journal/jap/110/7/10.1063/1.3647782
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/content/aip/journal/jap/110/7/10.1063/1.3647782
2011-10-14
2015-05-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/7/10.1063/1.3647782
10.1063/1.3647782
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