(Color online) GIXRD patterns of the films. The XRD pattern of the target is also shown for comparison.
(Color online) Raman spectra of (In, Yb)-doped CoSb3 film. The experimental data is shown by open circles and the overall fit by the solid black line. The individual Lorentzian line shapes are shown by the respective dashed lines. The identified phonon modes are marked.
(Color online) Temperature variation of electrical resistivity of the films. The high-temperature resistivity measured using the linear four-probe technique is shown enlarged in the inset.
(Color online) ln (ρ) vs 1/T plot for the films. The linear fits to the high-temperature region above 250 K are also shown.
(Color online) Carrier concentration of the films as a function of inverse temperature. Inset shows the calculated Hall mobility of the films as a function of temperature along with a T 3/2 fit (dotted line).
(Color online) Measured high-temperature Seebeck coefficient of the films.
(Color online) Calculated power factor of the films as a function of temperature.
(Color online) Co and O core-loss signal along the EELS line scan done perpendicular to the interface for the films. The x axis shows the length of the line scans in nm from which the interface region can be quantified. The interface region is marked by the vertical lines. To the left of the interface is the film and to the right, the substrate.
Peak positions, ν and linewidths (FWHM), Δν (in cm−1) from Lorentzian fits to the Raman active modes for the In0.1Yb0.1Co4Sb12 film together with that reported for unfilled CoSb3 crystallite,30 the theoretically predicted zone center frequencies,11 and the associated assignment of modes.
Calculated transport properties at 300 K of the films and that reported for the target.
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