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Optimal Cu buffer layer thickness for growing epitaxial Co overlayers on Si(111)7 × 7
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10.1063/1.3651598
/content/aip/journal/jap/110/8/10.1063/1.3651598
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3651598
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Intensity of the RHEED specular beam versus Cu dose deposited onto Si(111)7 × 7 surface at RT. STM images with line profiles and RHEED patterns with incident electron beam along the Si(111) direction from Cu films of various thickness, (b) 2.5 ML, (c) 3.5 ML, and (d) 11.5 ML. The corresponding points in the RHEED intensity curve in (a) are indicated.

Image of FIG. 2.
FIG. 2.

In-plane lattice constant of the Cu buffer layer as a function of Cu dose deposited onto Si(111)7 × 7 at RT. The dashed line indicates the lattice constant of a fcc Cu(111) bulk crystal, the dotted line that of a fcc Co(111) crystal. The error bars indicate the accuracy with which the lattice constants were evaluated from the RHEED patterns.

Image of FIG. 3.
FIG. 3.

(Color online) 100 × 100 nm2 STM image and RHEED pattern (in the inset) of the 5 ML thick Co film grown on 2.5 ML Cu buffer on Si(111)7 × 7.

Image of FIG. 4.
FIG. 4.

(Color online) Intensity of the RHEED specular beam versus Co dose deposited onto the Cu buffer layers of various thickness, 2.5 ML, 3.5 ML, and 11.5 ML.

Image of FIG. 5.
FIG. 5.

(Color online) Growth of Co films on a 3.5 ML Cu buffer. STM images showing the surface morphology after deposition of (a) 0.25 ML, (b) 0.5 ML, (c) 5 ML, and (d) 12 ML of Co. Scale: (a), (c), and (d) 200 × 200 nm2; (b) 100 × 100 nm2.

Image of FIG. 6.
FIG. 6.

(Color online) Growth of Co films on an 11.5 ML Cu buffer. 100 × 100 nm2 STM images showing the surface morphology after deposition of (a) 0.75 ML, (b) 1.5 ML, (c) 3 ML, and (d) 12 ML of Co.

Image of FIG. 7.
FIG. 7.

(Color online) Coercivity of the Co films grown on 3.5 ML (red open squares, dashed line) and 11.5 ML (blue closed squares, solid line) Cu buffers as a function of the deposited Co dose.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Angular dependence of the remanent-to-saturation magnetization ratio for the Co(12 ML)/Cu(3.5 ML)/Si(111) (red open squares) and Co(12 ML)/Cu(11.5 ML)/Si(111) (blue closed squares) samples. (b) Magnetic loops of the Co(12 ML)/Cu(3.5 ML)/Si(111) sample measured along the easy axis and the hard axis of magnetization and shown by dashed and solid lines, respectively.

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/content/aip/journal/jap/110/8/10.1063/1.3651598
2011-10-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimal Cu buffer layer thickness for growing epitaxial Co overlayers on Si(111)7 × 7
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3651598
10.1063/1.3651598
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