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Non-resistance-based cell-state metric for phase-change memory
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10.1063/1.3653279
/content/aip/journal/jap/110/8/10.1063/1.3653279
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional TEM image of a PCM mushroom cell. (b) Schematic of a PCM mushroom cell. (c) Approximation of the a-GST geometry. (d) Cylindrical approximation of the a-GST geometry.

Image of FIG. 2.
FIG. 2.

(Color online) A typical experimental I–V characteristic corresponding to a PCM cell showing the threshold switching behavior and sub-threshold conduction.

Image of FIG. 3.
FIG. 3.

(Color online) Computed I–V characteristics corresponding to different a-GST thicknesses for a mushroom cell geometry obtained from Eq. (2). Each I–V characteristic can be fit with Eq. (3) with an effective contact radius, , and an effective amorphous thickness, (denoted by dashed lines).

Image of FIG. 4.
FIG. 4.

(Color online) Analytical results: (a) The and as a function of the amorphous thickness. (b) The R and M as a function of the amorphous thickness.

Image of FIG. 5.
FIG. 5.

(Color online) Illustration of the cell-state metric M and its variant M diff.

Image of FIG. 6.
FIG. 6.

(Color online) Experimental results: (a) The threshold switching (TS) voltage as a function of . (b) The threshold switching (TS) current as a function of .

Image of FIG. 7.
FIG. 7.

(Color online) Experimental results: (a) Extracted values of and as a function of the programming voltage. (b) The R and M as a function of the programming voltage.

Image of FIG. 8.
FIG. 8.

(Color online) Experimental results on drift tolerance. Derived drift coefficient v corresponding to (a) the low-field resistance metric, (b) the M metric, and (c) its variant M diff.

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/content/aip/journal/jap/110/8/10.1063/1.3653279
2011-10-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-resistance-based cell-state metric for phase-change memory
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653279
10.1063/1.3653279
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