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Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method
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10.1063/1.3653825
/content/aip/journal/jap/110/8/10.1063/1.3653825
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653825
/content/aip/journal/jap/110/8/10.1063/1.3653825
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/content/aip/journal/jap/110/8/10.1063/1.3653825
2011-10-28
2015-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653825
10.1063/1.3653825
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