(Color online) XRD scan (θ-2θ) on the symmetric (002) reflections of InGaN samples for PD_A and PD_B.
(Color online) Room temperature PL spectra of InGaN samples for PD_A, PD_B, and PD_C.
(Color online) SIMS depth profiles of (a) carbon and (b) oxygen impurities for InGaN samples for PD_A, PD_B, and PD_C.
(Color online) Three-dimensional AFM images of InGaN samples for (a) PD_A, (b) PD_B, and (c) PD_C.
(Color online) I-V characteristics of fabricated (a) InGaN and (b) GaN PDs under dark environment.
(Color online) Schematic conduction band structure and current mechanism of (a) PD_B, (b) PD_C, (c) PD_D, and (d) PD_E. The dark currents, including thermionic emission (solid), trap-assisted tunneling (dot), and photocurrent (dash), represent the transport process.
(Color online) Field-dependent measurements of fabricated InGaN and GaN PDs with Mg-doped GaN cap layer.
Current density as a function of voltage for (a) PD_B and (b) PD_C for temperatures ranging from 100 to 400 K. Insets show measured current density divided by the square of the electric field as a function of inverse electric field for both devices at 100 and 150 K.
(Color online) Spectral responsivities of (a) InGaN and (b) GaN PDs at –5 V applied bias.
(Color online) Transmission spectra measured from (a) InGaN and (b) GaN samples. Inset shows the absorption strength of InGaN active layer ranging from 360 to 390 nm for PD_B and PD_C, respectively.
(Color online) Low-frequency noise spectra of fabricated InGaN PDs at −5V applied bias.
The comparison of material analyses on InGaN samples grown by TMG and TEG.
Hall parameters for all InGaN samples.
Low-frequency noise characteristics for all fabricated InGaN PDs.
The comparison of device performances on fabricated InGaN PD with literature results.
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