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InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
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10.1063/1.3653834
/content/aip/journal/jap/110/8/10.1063/1.3653834
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653834

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD scan (θ-2θ) on the symmetric (002) reflections of InGaN samples for PD_A and PD_B.

Image of FIG. 2.
FIG. 2.

(Color online) Room temperature PL spectra of InGaN samples for PD_A, PD_B, and PD_C.

Image of FIG. 3.
FIG. 3.

(Color online) SIMS depth profiles of (a) carbon and (b) oxygen impurities for InGaN samples for PD_A, PD_B, and PD_C.

Image of FIG. 4.
FIG. 4.

(Color online) Three-dimensional AFM images of InGaN samples for (a) PD_A, (b) PD_B, and (c) PD_C.

Image of FIG. 5.
FIG. 5.

(Color online) I-V characteristics of fabricated (a) InGaN and (b) GaN PDs under dark environment.

Image of FIG. 6.
FIG. 6.

(Color online) Schematic conduction band structure and current mechanism of (a) PD_B, (b) PD_C, (c) PD_D, and (d) PD_E. The dark currents, including thermionic emission (solid), trap-assisted tunneling (dot), and photocurrent (dash), represent the transport process.

Image of FIG. 7.
FIG. 7.

(Color online) Field-dependent measurements of fabricated InGaN and GaN PDs with Mg-doped GaN cap layer.

Image of FIG. 8.
FIG. 8.

Current density as a function of voltage for (a) PD_B and (b) PD_C for temperatures ranging from 100 to 400 K. Insets show measured current density divided by the square of the electric field as a function of inverse electric field for both devices at 100 and 150 K.

Image of FIG. 9.
FIG. 9.

(Color online) Spectral responsivities of (a) InGaN and (b) GaN PDs at –5 V applied bias.

Image of FIG. 10.
FIG. 10.

(Color online) Transmission spectra measured from (a) InGaN and (b) GaN samples. Inset shows the absorption strength of InGaN active layer ranging from 360 to 390 nm for PD_B and PD_C, respectively.

Image of FIG. 11.
FIG. 11.

(Color online) Low-frequency noise spectra of fabricated InGaN PDs at −5V applied bias.

Tables

Generic image for table
Table I.

The comparison of material analyses on InGaN samples grown by TMG and TEG.

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Table II.

Hall parameters for all InGaN samples.

Generic image for table
Table III.

Low-frequency noise characteristics for all fabricated InGaN PDs.

Generic image for table
Table IV.

The comparison of device performances on fabricated InGaN PD with literature results.

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/content/aip/journal/jap/110/8/10.1063/1.3653834
2011-10-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/8/10.1063/1.3653834
10.1063/1.3653834
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