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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties
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10.1063/1.3647761
/content/aip/journal/jap/110/9/10.1063/1.3647761
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3647761
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Evolution of the Al 2p binding feature measured using the in situ XPS in the initial stages of ALD of Al2O3 on oxidant prepulsed Ge (001) substrate.

Image of FIG. 2.
FIG. 2.

Al:O composition ratio from in situ XPS as a function of ALD cycle number.

Image of FIG. 3.
FIG. 3.

(Color online) CET vs physical thickness scaling trend of Pt/ALD-Al2O3/Ge capacitors.

Image of FIG. 4.
FIG. 4.

(Color online) Calibrated VB photoemission spectra of clean Ge and Al2O3/Ge samples showing VB offset ∼3.3 eV for the Al2O3/Ge interface.

Image of FIG. 5.
FIG. 5.

(Color online) Calibrated Al 2p energy loss of Al2O3/Ge samples showing bandgap ∼6.6 eV for as-deposited ALD-Al2O3.

Image of FIG. 6.
FIG. 6.

(Color online) Energy band diagram of as-deposited ALD-Al2O3/Ge structure inferred from SRPES measurements. Estimated uncertainty of conduction band offset and valence band offset are ± 0.3 and ± 0.1 eV, respectively.

Image of FIG. 7.
FIG. 7.

(Color online) Scaling of the flatband voltage with physical thickness of the Al2O3 film.

Image of FIG. 8.
FIG. 8.

(Color online) SRPES data from as-deposited and post-FGA 1.1 nm Al2O3/Ge samples (a) Ge 3d spectra (b) Al 2p spectra.

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/content/aip/journal/jap/110/9/10.1063/1.3647761
2011-11-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3647761
10.1063/1.3647761
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