(Color online) Evolution of the Al 2p binding feature measured using the in situ XPS in the initial stages of ALD of Al2O3 on oxidant prepulsed Ge (001) substrate.
Al:O composition ratio from in situ XPS as a function of ALD cycle number.
(Color online) CET vs physical thickness scaling trend of Pt/ALD-Al2O3/Ge capacitors.
(Color online) Calibrated VB photoemission spectra of clean Ge and Al2O3/Ge samples showing VB offset ∼3.3 eV for the Al2O3/Ge interface.
(Color online) Calibrated Al 2p energy loss of Al2O3/Ge samples showing bandgap ∼6.6 eV for as-deposited ALD-Al2O3.
(Color online) Energy band diagram of as-deposited ALD-Al2O3/Ge structure inferred from SRPES measurements. Estimated uncertainty of conduction band offset and valence band offset are ± 0.3 and ± 0.1 eV, respectively.
(Color online) Scaling of the flatband voltage with physical thickness of the Al2O3 film.
(Color online) SRPES data from as-deposited and post-FGA 1.1 nm Al2O3/Ge samples (a) Ge 3d spectra (b) Al 2p spectra.
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