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ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
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10.1063/1.3653835
/content/aip/journal/jap/110/9/10.1063/1.3653835
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3653835

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagrams of different devices with ZnO nanorods. (b) Schematic energy band diagrams of the GaN/ZnO devices (left) and GaN/Ag devices (right). (c) PL spectra of ZnO nanorods and film. The inset shows the cross section SEM of ZnO nanorods and film.

Image of FIG. 2.
FIG. 2.

(Color online) I-V curves of (a) P1, P2, P3 devices with ZnO (closed symbols), and Ag (open symbols) (b) QW1 and QW2 devices ZnO (closed symbols) and Ag (open symbols), the inset shows the ohmic contact check for ZnO (ITO/ZnO nanorods/Ag) and p-GaN (p-GaN-Ni/Au); fitting of the I-V curve of P1-ZnO device for (c) forward bias and (d) reverse bias.

Image of FIG. 3.
FIG. 3.

(Color online) Electroluminescence spectra under different reverse bias voltages for devices with ZnO (PMMA) and Ag, respectively, on (a) and (b) P1, (c) and (d) P2, and (e) and (f) P3 substrates.

Image of FIG. 4.
FIG. 4.

(Color online) Electroluminescence spectra under different reverse bias voltages of the devices on QW1 substrates with (a) electrodeposited ZnO nanorods, (b) e-beam evaporated ZnO film, and (c) Ag.

Image of FIG. 5.
FIG. 5.

(Color online) Electroluminescence spectra under different forward bias voltages for devices with ZnO (PMMA) and Ag, respectively, on (a) and (b) P2 and (c) and (d) P3. (e) ZnO (SOG) on P1.

Image of FIG. 6.
FIG. 6.

(Color online) EL spectra under forward bias of 40 V for devices with ZnO and Ag on QW2 and Al and Ag on QW1. The inset shows EL spectrum under forward bias of 60 V for device with ZnO on QW1, which lights up at higher bias.

Image of FIG. 7.
FIG. 7.

(Color online) Variable temperature PL spectra of (a) QW1, (b) QW2, (c) P1, and (d) P2.

Image of FIG. 8.
FIG. 8.

(Color online) Variable power PL spectra of (a) QW1, (b) QW2, (c) P1, and (d) P2.

Image of FIG. 9.
FIG. 9.

(Color online) CL spectra of (a) QW1, (b) QW2, (c) P1 (the inset shows CL spectra of ZnO/P1 structure), and (d) P2.

Image of FIG. 10.
FIG. 10.

(Color online) (a) L-V curves of devices on QW1 (b) L-I curves of devices on QW2. The insets show device photos. (c) EQE vs. bias current for QW2 devices with ZnO and Ag.

Tables

Generic image for table
Table I.

Labels and corresponding GaN structures.

Generic image for table
Table II.

Summary of device performance parameters. For peak wavelengths in devices exhibiting peak shifts, bias voltage is specified in the brackets. VT denotes turn-on voltage, F denotes forward bias, and R denotes reverse bias. All devices with ZnO are with PMMA, except QW1-ZnO which is with SOG.

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/content/aip/journal/jap/110/9/10.1063/1.3653835
2011-11-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3653835
10.1063/1.3653835
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