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Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys.109, 073509 (2011)]
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2011-11-02
2014-12-29

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Scitation: Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys.109, 073509 (2011)]
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3656431
10.1063/1.3656431
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