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Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) XRD pattern of the low-rate (0.08 nm/s) MnGa film, where the symbols are the experimental data and the thick line is the calculated curve. The thin line below the main pattern is the difference between the observed and calculated patterns. Shown in the inset is the GIXRD pattern for the same sample. The vertical stripes mark the position of the β-Mn(Ga) and DO22 Mn3Ga Bragg reflections.

Image of FIG. 2.
FIG. 2.

(Color online) (a), (b) Top view and (c), (d) cross-sectional view SEM images of the high-rate (left) and low-rate (right) MnGa films, respectively. (e) Plane-view bright-field HR-TEM image and (f) STEM image (top) and chemical profile obtained from electron energy-loss spectroscopy (bottom) of the low-rate sample. The inset in (e) is a selected area electron diffraction pattern.

Image of FIG. 3.
FIG. 3.

(Color online) AFM image (3 × 3 μm2 scan area) and line scans (white dashed lines) for the (a), (c) high-rate and (b), (d) low-rate MnGa films. (e) MFM image of the low-rate MnGa film where the island from (b) are outlined for guidance. The arrows indicate the single domain contrast with an in-plane component found in many of the islands. Measurements were carried out on thermally demagnetized samples.

Image of FIG. 4.
FIG. 4.

In-plane and out-of-plane hysteresis loops for (a) high-rate and (b) low-rate MnGa films. Inset in (b) shows the temperature dependence of the coercivity of the low-rate sample.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity