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Doping of GaN1−xAsx with high As content
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Conductivity as a function of temperature for GaN0.35As0.65:Mg samples with varying Mg content given in atomic percents. The inset table gives activation energies calculated from the linear low temperature region of the curve to the right side of the dashed line (50–6 K).

Image of FIG. 2.
FIG. 2.

(Color online) Thermopower as a function of temperature for GaN0.35As0.65:Mg samples with varying Mg content (same samples as shown in Fig. 1). The positive sign for Mg doped samples shows Mg behaving as an acceptor. The error bars signify the standard deviation from three measurements at a given average temperature. Higher resistance samples have larger errors due to the uncertainties in measuring small voltages across large resistances.

Image of FIG. 3.
FIG. 3.

(Color online) Structural analysis of GaN0.35As0.65:Mg samples. Representative x-ray diffraction pattern of samples discussed in Figs. 1 and 2 (dashed) and sample grown under lower As BEP to reduce crystallinity (solid) (a). Low magnification Z-contrast transmission electron microscopy image, selected area diffraction, and high-resolution TEM images of a sample discussed in Figs. 1 and 2(b), 2(c), 2(d), and 2(e), respectively. In (b), the bright contrast is the c-GaAs:N phase shown in (e) and the dark contrast is the amorphous GaN1−x Asx phase shown in (d). The diffraction pattern (c) shows a superposition of c-GaAs:N rings from (111), (220), and (311) planes indicated by 1, 2, and 3 and two broad amorphous rings indicated by arrows.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping of GaN1−xAsx with high As content