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Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
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10.1063/1.3658246
/content/aip/journal/jap/110/9/10.1063/1.3658246
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658246
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Thickness as determined from SE as a function of the number of ALD cycles for a SiO2 film and a subsequently deposited Al2O3 film. A short plasma step (4 s) preceded the first SiO2 cycle. (b) Corresponding high resolution transmission electron microscopy (TEM) image showing the SiO2/Al2O3/SiO2 stack on Si. The SiO2 layers were deposited using 25 cycles. The thickness was 3.8 ± 0.3 nm and 2.9 ± 0.3 nm for the bottom and top SiO2 layers, respectively. The Al2O3 thickness was 31.5 ± 0.3 nm (256 ALD cycles). The inset of (a) shows the thickness dependence on the half-cycles. Note that apart from (b), all other experiments described in this work were performed on SiO2/Al2O3 stacks.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Optical second-harmonic generation spectra and (b) EFISH intensity as obtained from the data by optical modeling for ALD SiO2/Al2O3 stacks comprising SiO2 interlayer thicknesses between 0 and 12.2 nm. All samples were annealed at 400 °C (10 min., N2). The schematic band diagrams (inset) depict the changes in Qpos (SiO2) and Qneg (SiO2/Al2O3 interface) for a variation in SiO2 thickness.

Image of FIG. 3.
FIG. 3.

(Color online) Passivation properties for ALD SiO2/Al2O3 stacks after annealing at 400 °C (N2, 10 min.) (a) Injection-level dependent effective lifetime and (b) normalized effective lifetime. (c) Ratio between effective lifetime at injection level of Δn = 1 × 1013 cm−3 (τ LI) and 5 × 1014 cm−3 (τ HI) and (d) maximum surface recombination velocity (Δn = 5 × 1014 cm−3) as a function of SiO2 thickness. As substrates, n-type c-Si wafers (∼3.5 Ω cm) were used.

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/content/aip/journal/jap/110/9/10.1063/1.3658246
2011-11-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658246
10.1063/1.3658246
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