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Modeling pulsed-laser melting of embedded semiconductor nanoparticles
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10.1063/1.3658265
/content/aip/journal/jap/110/9/10.1063/1.3658265
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658265
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Evolution of the nanoparticle size distribution over time. Size distributions are presented at the beginning of the pulse (0.1 ns), during melting (8 ns), at the end of the pulse (30 ns), during freezing (57 ns), and after cooling (100 ns). The cutoff in size at 1.7 Å radius is single atoms.

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of the multiple-reflections upper bound on the laser absorption and single-pass lower bound. Temperature profiles (a) and average radii (b) over time for both simulations. Size distributions of the initial state, at the end of the laser pulse, and after cooling for 70 ns for multiple absorptions (c) and single-pass (d) case.

Image of FIG. 3.
FIG. 3.

(Color online) Distributions before and after PLM, starting from the as-implanted and 6-s RTA final distributions. The distributions after PLM overlay each other.

Image of FIG. 4.
FIG. 4.

(Color online) Final particle size distributions during a repeated RTA (a) and PLM (b) cycle. Results from all but the first RTA step overlay each other.

Image of FIG. 5.
FIG. 5.

(Color online) Comparison of lower laser powers. Pulse time is constant and total laser fluence is decreased from 0.2 J/cm2 (black, c) to 0.15 J/cm2 (dark gray/red, d) to 0.1 J/cm2 (light gray/green, e). Temperature profiles (a) and average radii (b) are shown for each fluence.

Image of FIG. 6.
FIG. 6.

Size-focusing using fine-tuned PLM and RTA; final distribution (solid line) has a FWHM just 14.9% of the average radius.

Image of FIG. 7.
FIG. 7.

(Color online) Selected simulations at a interface energy 0.5 J/m2. PLM at a laser fluence of 0.3 J/cm2 (black, c) and 0.15 J/cm2 (dark gray/red, d) are shown. Temperature profiles (a) and average radii (b) are shown for each fluence. Compare Figs. 2 and 5 .

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/content/aip/journal/jap/110/9/10.1063/1.3658265
2011-11-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling pulsed-laser melting of embedded semiconductor nanoparticles
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658265
10.1063/1.3658265
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