(Color online) GAXRD scan of as-deposited and 350 °C magnetic annealed Si/IrMn(15 nm)/ CoFeB (10 nm) bilayers.
(Color online) MOKE M-H loops of (a) Si/CoFeB(10 nm) as-deposited at RT, (b) Si/IrMn(15 nm)/ CoFeB(10 nm), as-deposited at RT, (c) as-deposited Si/IrMn(15 nm)/CoFeB(10 nm) bilayer for two different in-plane film orientations (shown together for comparison), (d) 350 °C magnetic annealed (1.2 kOe) Si/IrMn(15 nm)/CoFeB(10 nm) bilayer along easy (H parallel to HCF) and hard (H perpendicular to HCF) axes.
(Color online) MOKE M-H loops for as-grown Si/IrMn(15 nm)/CoFeB(10 nm) measured at 300 K during the first (black), second (red), fifth (blue), and tenth (green) consecutive field cycles.
(Color online) Schematic representation of the spin structure in the FM/AF bilayer system showing uncompensated Mn spins at the interface.
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