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Positive exchange bias in as-deposited ion-beam sputtered IrMn/CoFeB system
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10.1063/1.3658854
/content/aip/journal/jap/110/9/10.1063/1.3658854
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658854
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) GAXRD scan of as-deposited and 350 °C magnetic annealed Si/IrMn(15 nm)/ CoFeB (10 nm) bilayers.

Image of FIG. 2.
FIG. 2.

(Color online) MOKE M-H loops of (a) Si/CoFeB(10 nm) as-deposited at RT, (b) Si/IrMn(15 nm)/ CoFeB(10 nm), as-deposited at RT, (c) as-deposited Si/IrMn(15 nm)/CoFeB(10 nm) bilayer for two different in-plane film orientations (shown together for comparison), (d) 350 °C magnetic annealed (1.2 kOe) Si/IrMn(15 nm)/CoFeB(10 nm) bilayer along easy (H parallel to HCF) and hard (H perpendicular to HCF) axes.

Image of FIG. 3.
FIG. 3.

(Color online) MOKE M-H loops for as-grown Si/IrMn(15 nm)/CoFeB(10 nm) measured at 300 K during the first (black), second (red), fifth (blue), and tenth (green) consecutive field cycles.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic representation of the spin structure in the FM/AF bilayer system showing uncompensated Mn spins at the interface.

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/content/aip/journal/jap/110/9/10.1063/1.3658854
2011-11-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Positive exchange bias in as-deposited ion-beam sputtered IrMn/CoFeB system
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/9/10.1063/1.3658854
10.1063/1.3658854
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