(Color online) AFM images of P3HT: HDPE blend films with different ratio of each homopolymer. P3HT:HDPE composition from top to bottom (a) 100:0, (b) 80:20, (c) 50:50, (d) 20:80, (e) 0:100. (left) Topographic images. (right) Phase images. Field of view of Figs. 1(a)–1(d) is 2 μm × 2 μm and Fig. 1(e) is 1 μm × 1 μm.
(Color online) AFM topographic image (1 μm × 1 μm) and cross-section line scans of 50:50 P3HT:HDPE blend films. (a) Line scan illustrating HDPE-rich lamella ridges and (b) line scan illustrating depression in P3HT-rich columnar area.
Transmission electron microscope image of P3HT:HDPE (50:50) blend thin films. Scale bar 200 nm.
(Color online) Proposed model of film structure for P3HT:HDPE (50:50) blend, showing columnar regions of semi-crystalline P3HT (or rich in P3HT) (a few 100 nm in diameter). These are enclosed laterally by a matrix of HDPE (or HDPE-rich) lamellar material. Such a laterally segregated structure between P3HT and HDPE penetrates through the bulk of the film. In addition, strong segregation of P3HT to the film-substrate interface and the film-air interface is also apparent.
(a) Output characteristic for 50:50 P3HT:HDPE transistor. Gate voltages −40, −20, 0, 20, and 40 V. (b) Transfer characteristic for 50:50 P3HT:HDPE transistor. Drain voltages −4 V and −40 V.
Atomic concentration of the elements in various ratio blend films at take-off angle of 90° (∼7.5 nm depth). The atomic concentrations are calculated by averaging the atomic ratios at three different regions on the films and the standard deviation is shown within the parenthesis.
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