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Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells
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10.1063/1.3673271
/content/aip/journal/jap/111/1/10.1063/1.3673271
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3673271
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

LT CW-PL spectrum (solid line) of Ge/Si0.15Ge0.85 MQWs with Lz = 8.7 nm. The direct gap related cΓ1-HH1 emission is visible at about 1.01 eV. The zero-phonon cL1-HH1 transition and its phonon replicas are present between 0.7 and 0.8 eV. The linear absorption spectrum (dotted line) is also shown.

Image of FIG. 2.
FIG. 2.

Typical decay curve obtained for the zero-phonon cL1-HH1 transition at a lattice temperature T = 14 K.

Image of FIG. 3.
FIG. 3.

Decay time of the zero-phonon cL1-HH1 transition as a function of the QW thickness Lz at the lattice temperature T = 14 K.

Image of FIG. 4.
FIG. 4.

CW-PL spectra at T = 5 K of two samples with the same well thickness (7.3 nm) and different decay times. The solid line refers to the sample with a longer decay time, and the dashed line to the other sample.

Image of FIG. 5.
FIG. 5.

Decay time dependence on the reciprocal temperature. Dots refer to a sample with 7.3 nm QWs, and triangles to a sample with 3.8 nm QWs. Solid lines are guides for the eye.

Image of FIG. 6.
FIG. 6.

PL decay of the cΓ1-HH1 direct transition at 10 K (solid line). The laser pulse is also shown (dotted line).

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/content/aip/journal/jap/111/1/10.1063/1.3673271
2012-01-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3673271
10.1063/1.3673271
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