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Ar plasma induced deep levels in epitaxial n-GaAs
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10.1063/1.3673322
/content/aip/journal/jap/111/1/10.1063/1.3673322
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3673322

Figures

Image of FIG. 1.
FIG. 1.

DLTS spectra obtained from samples A-D. The spectra were recorded using a rate window of 80 s−1, a reverse bias of −2 V, and a filling pulse of 2 V. The pulse width in all cases was 1 ms.

Image of FIG. 2.
FIG. 2.

Arrhenius plots for defects detected in OMVPE grown n-GaAs following Ar ICP etching (sample C) and ICP etching +MeV electron irradiation (sample D). The activation enthalpy for E1, E1′, and Ec - 0.61 were recorded at a reverse bias of −1 V.

Image of FIG. 3.
FIG. 3.

Laplace DLTS spectrum recorded at 30 K obtained from sample D. The emission rate for E1 is higher by a factor 20 compared to that of E1′. The spectra were recorded using a reverse bias of −1 V and a filling pulse of 1 V. The pulse width was 1 ms.

Image of FIG. 4.
FIG. 4.

DLTS spectra of the ICP etched material depicting the direct transformation between Ec - 0.31 eV and Ec - 0.61 eV. The metastable nature of E1′ is also clearly evident. The spectra were recorded using a rate window of 1.0 s−1, a reverse bias of −2 V, and a filling pulse of 2 V. The pulse width was 1 ms.

Image of FIG. 5.
FIG. 5.

Arrhenius data for the E0.61 → E0.31 and E0.31 → E0.61 (M3 → M4? and M4 → M3?) trap transformations.

Tables

Generic image for table
Table I.

Electronic properties of defects in ICP etched OMVPE grown n-GaAs. The peak temperatures were obtained at a rate window of 80 s−1.

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/content/aip/journal/jap/111/1/10.1063/1.3673322
2012-01-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ar plasma induced deep levels in epitaxial n-GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3673322
10.1063/1.3673322
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