DLTS spectra obtained from samples A-D. The spectra were recorded using a rate window of 80 s−1, a reverse bias of −2 V, and a filling pulse of 2 V. The pulse width in all cases was 1 ms.
Arrhenius plots for defects detected in OMVPE grown n-GaAs following Ar ICP etching (sample C) and ICP etching +MeV electron irradiation (sample D). The activation enthalpy for E1, E1′, and Ec - 0.61 were recorded at a reverse bias of −1 V.
Laplace DLTS spectrum recorded at 30 K obtained from sample D. The emission rate for E1 is higher by a factor 20 compared to that of E1′. The spectra were recorded using a reverse bias of −1 V and a filling pulse of 1 V. The pulse width was 1 ms.
DLTS spectra of the ICP etched material depicting the direct transformation between Ec - 0.31 eV and Ec - 0.61 eV. The metastable nature of E1′ is also clearly evident. The spectra were recorded using a rate window of 1.0 s−1, a reverse bias of −2 V, and a filling pulse of 2 V. The pulse width was 1 ms.
Arrhenius data for the E0.61 → E0.31 and E0.31 → E0.61 (M3 → M4? and M4 → M3?) trap transformations.
Electronic properties of defects in ICP etched OMVPE grown n-GaAs. The peak temperatures were obtained at a rate window of 80 s−1.
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