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X-band microwave generation caused by plasma-sheath instability
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10.1063/1.3675178
/content/aip/journal/jap/111/1/10.1063/1.3675178
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3675178
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Figures

Image of FIG. 1.
FIG. 1.

(a) 1: vacuum chamber; 2: replaceable platinum probe, U b , bias voltage, either dc or rectangular pulses with 50 μs duration; 3: ferromagnetic core of the FIC plasma source, inner diameter 10 cm, outer diameter 15 cm, thickness 2.5 cm, 15 turns of winding; 4: large planar probe (S = 7 cm2); 5: thin tungsten filament (hot probe); 6: hot cathode, U heat pulse duration 0.2 s, repetition rate 5 s; 7: dc injector; 8: combination of insulated coaxial waveguide adaptors. (b) Left: cathode emitted current I emis , U heat  = 10.5 V, U a  = 100 V, Xe gas; right: ion saturation current , collected by planar probe,  ∼ n p .

Image of FIG. 2.
FIG. 2.

(a) 1: cathode emitted current I emis ; 2: electron current I pr , collected by the thin (0.05 mm) probe. (b) Expanded waveforms near I emis ≈ 40 mA (n p  ∼ 109 cm−3); 2: electron current I pr ; 3: bias voltage U b ; 4: plasma potential Uh with respect to the chamber walls; 5: UHF spike in the probe current I pr . (c) Expanded UHF spike, f p ≈ 290 MHz. (d) the same probe, used as a resonance probe, maximal reflected signal at the same frequency.

Image of FIG. 3.
FIG. 3.

(a) 1: emitted current I emis ; 2: ion saturation current , collected by the planar probe during FIC rf driving pulse. (b) 2: expanded pulse; 3: bias pulse U b . (c) 1: plasma potential Uh ; 2: ion saturation current; 3: electron current I pr , collected by the thin (0.05 mm) probe. (d), plasma density n p vs U ind for various pressures of Xe gas. Derived from to the large planar probe, T e  ∼ 4 eV.

Image of FIG. 4.
FIG. 4.

(a) Xe gas. (b) Ar gas. 1: bias voltage U b ; 2: electron current I pr , collected by the thin (0.05 mm) probe; 3: detected UHF signal. (c) The same, but the probe diameter is 1.1 mm. (d) The thin (0.05 mm) probe, but the current I pr is high (25 A).

Image of FIG. 5.
FIG. 5.

Xe gas. (a) 1: microwave signal U UHF vs gas pressure P; 2: optimal probe current I pr , U ind  ∼ (350–400) V. (b) Bias voltage U b vs U ind for various pressures P. (c) Microwave signal U UHF vs U ind for various pressures P. (d) “Breaking points” of microwave signal for low and high pressures.

Image of FIG. 6.
FIG. 6.

Microwave signal, obtained with narrow-band detector, 1: bias voltage U b ; 2: probe current I pr ; 3: microwave signal U UHF .

Image of FIG. 7.
FIG. 7.

Theoretical values of the transit angles (in π units), which correspond to the experimentally measured threshold potentials . Top-filled circles, pressure 0.8 mTorr; bottom-filled circles, pressure 0.2 mTorr. All other experimental points, which correspond to pressures between 0.2 mTorr and 0.8 mTorr, are located between the depicted curves.

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/content/aip/journal/jap/111/1/10.1063/1.3675178
2012-01-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X-band microwave generation caused by plasma-sheath instability
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/1/10.1063/1.3675178
10.1063/1.3675178
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