Optical microscope image of 1100 Å thick HWCVD film that has been stepwise annealed in 1 h intervals at 600 °C for 7 h.
(a) Optical micrograph from μ-Raman spectrometer, and (b) silicon Raman spectrum for a HWCVD film annealed for 8 h at 600 °C. The scale bar in Fig. 2(a) is 8.5 μm.
Number of crystallites counted per unit area (34 μm × 34 μm) versus 600 °C anneal time for identically deposited PECVD films of different thickness.
Crystallite density versus anneal time for evaporated, HWCVD, and PECVD a-Si films of different thickness. Data for the evaporated films are from Roorda et al. 7 The anneal temperatures are indicated in the legend.
Crystallite nucleation rate rn versus as grown film H content for HWCVD and PECVD films examined using different techniques. The film anneal temperature was 600 °C.
SIMS impurity (O,C,N) profiles versus sputtering depth (μm) for an 1100 Å thick PECVD film (a) in its as grown state (no thermal annealing), (b) continuously annealed at 600 °C for 8 h, and (c) stepwise annealed at 600 °C for four 2 h anneals (letting the samples sit at room temperature in air overnight between anneals).
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