(a) Scanning electron micrograph of ZnO NWs grown in vertical array (inset: top view–scale bar 1 μm) and (b) high resolution transmission electron micrograph of ZnO NW indicating highly ordered single crystal structure.
Room temperature photoluminescence (PL) of ZnO NW indicating band edge energy peak and the lack of broad band peaks is attributed to high temperature growth (inset: low temperature PL).
(a) Fully fabricated visible transparent UV detector after heat treatment (inset: Schematic of nanowire device) (b) IV characteristics under 356 nm UV illumination (black square) and dark conditions (red triangle), linear plot, and (c) logarithmic plot. Note, the differential resistance of the dark current is found from the inverse slope of the IV characteristics in (b) and is determined to be 1.59 × 1011 Ω
Measured spectral responsivity of ZnO NW detector at 1.5 V bias. Note, the responsivity at the cutoff wavelength of 360 nm is 2.98 × 10−7 A/W.
(a) Transmittance of bare PEN on a logarithmic scale (inset: schematic of test setup for illumination) and (b) Current-Voltage characteristics for front (red arrows on top) and reverse (blue arrows under bottom) side illuminations on device compared to dark conditions.
Performance metrics of ZnO UV detectors.
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