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Long range lateral migration of intrinsic point defects in n-type 4H-SiC
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Image of FIG. 1.
FIG. 1.

An illustration of the layout of SBDs on a sample (inset). Close-up of the area indicated by the small rectangle, displaying the irradiated area and the closest contacts. The beam had an approximate diameter of 100 μm, with a tail towards the right in the image.

Image of FIG. 2.
FIG. 2.

DLTS spectra recorded before and after irradiation, showing the decrease in peak amplitudes with increasing distance from the irradiated area. Inset: Arrhenius plots for the DLTS peaks, showing that their emission rates (en), corrected for the temperature dependence of the electron velocity and of the density of states in the conduction band, depend exponentially on temperature, despite being rather broad. The DLTS spectra have a rate window of (640 ms)−1 and are deduced using a weighting function of lock-in type.

Image of FIG. 3.
FIG. 3.

Concentration versus distance from the irradiated area for the Z1/2 and S2 levels (revealed in Fig. 2). The DLTS background signal has been subtracted and one-dimensional diffusion has been assumed to fit the experimental data.


Generic image for table
Table I.

The band gap position (±1 standard deviation) and apparent capture cross section (σa) of the trapping centers which are detectable in Fig. 2.

Generic image for table
Table II.

Survey of the parameters for defect migration as extracted from solving Eq. (1) and fitting the experimental data for Z1/ 2, and S2.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Long range lateral migration of intrinsic point defects in n-type 4H-SiC