Side-view schematic of wurtzite-gallium nitride nanostructure with (a) a rectangular by cross-section, and (b) a triangular by by cross-section. The orange and green circles refer to the gallium and nitrogen atoms, respectively. Dashed box depicts a Ga-N unit cell, with diagonal and parallel bonds.
Variation of thermal conductivity with strain for both rectangular by and triangular by GaN nanostructures.
Change of mean bond length with strain for different regions in (a) rectangular and (b) triangular GaN nanostructures.
Changes in bond energy with strain at vertex and non-vertex regions.
Vibrational density of states for both (a) rectangular and (b) triangular GaN nanostructures at different strains.
A Comparison of VDoS peak shifts in both rectangular and triangular GaN nanostructures at different strains.
Temperature profiles of face of triangular GaN nanostructure with strain (a) ɛ = −3.40%, (b) ɛ = 0, and (c) ɛ = 3.40%.
Schematic of (a) symmetrically strained, and (b) asymmetrically strained rectangular GaN nanostructures.
Modulation of phonon softening/stiffening in asymmetrically strained rectangular GaN nanostructures.
Change of κ–ɛ relationship in asymmetrically strained rectangular GaN nanostructure.
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