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Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
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View: Figures


Image of FIG. 1.
FIG. 1.

Polarization versus voltage of BFO and BCFO films at room temperature.

Image of FIG. 2.
FIG. 2.

(a) I-V hysteresis loop without memory for as-grown BCFO film, where inset shows the charge/discharge process. (b) Unipolar resistive switch after (a). (c)I-V hysteresis without memory effect after (b). (d) Sketches for interface-type conducting path (left) and a filamentary conducting path (right).

Image of FIG. 3.
FIG. 3.

(a) Bipolar resistive switch of BCFO film, (b)unipolar resistive switch after (a), and (c) the other bipolar resistive switch after (b). (d) The Schottky emission relationship, i.e., log(I) ∝ V1/2, at unipolar HRS status.

Image of FIG. 4.
FIG. 4.

(a) Unipolar RHRS and RLRS of BCFO measured at 0.5 V at 20→180  °C and 20→ −140  °C, respectively. (b) The retention capacitance of RHRS and RLRS, where they are measured at 0.5 V once per minute.

Image of FIG. 5.
FIG. 5.

Four different I-V loops appear one by one with defect density and the corresponding current monotonically increasing in BFO and BCFO films, where the diameter of Pt top electrode is 120 μm and leakage current was measured at 3 V.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films