Polarization versus voltage of BFO and BCFO films at room temperature.
(a) I-V hysteresis loop without memory for as-grown BCFO film, where inset shows the charge/discharge process. (b) Unipolar resistive switch after (a). (c)I-V hysteresis without memory effect after (b). (d) Sketches for interface-type conducting path (left) and a filamentary conducting path (right).
(a) Bipolar resistive switch of BCFO film, (b)unipolar resistive switch after (a), and (c) the other bipolar resistive switch after (b). (d) The Schottky emission relationship, i.e., log(I) ∝ V1/2, at unipolar HRS status.
(a) Unipolar RHRS and RLRS of BCFO measured at 0.5 V at 20→180 °C and 20→ −140 °C, respectively. (b) The retention capacitance of RHRS and RLRS, where they are measured at 0.5 V once per minute.
Four different I-V loops appear one by one with defect density and the corresponding current monotonically increasing in BFO and BCFO films, where the diameter of Pt top electrode is 120 μm and leakage current was measured at 3 V.
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