TRPL decays in  GaAs at ambient conditions (Amb) and under uniaxial strain compression at different longitudinal stresses (values shown in GPa units). Data reproduced from Ref. 17. Dashed lines indicate the three effective lifetime components common for highly excited GaAs. Dashed curve is the fit of the ambient decay using the developed carrier dynamics model.
Calculated Δn(x) profiles in GaAs wafer at ambient conditions using the ΔnGT = 1 × 1019 cm−3 excitation level. The profiles, showing a reduction in magnitude and an expansion in depth, are obtained at 0.5, 5, 30, 60, and 80 ns after the onset of the excitation pulse. Inset shows the temporal shape of the excitation pulse.
Normalized PL spectra at ambient conditions during the excitation moment (solid curve) and at later times (dashed curve).
Experimental (a) and calculated (b) carried decays at ambient conditions for excitation levels reduced by a factor of two starting from the highest excitation at ΔnGT = 2 × 1019 cm−3. Dashed lines indicate various effective lifetimes.
Carrier decay changes due to the parameters in different processes: (a) diffusion, (b) surface recombination, (c) generation, (d) and trapping. Dashed curves in all the figures correspond to the ambient decay in Fig. 1.
Carrier decay changes due to the parameters in RR process (a) and (b) and NR process (c) and (d). Dashed curves in all the figures correspond to the ambient decay in Fig. 1.
Experimental (a) and calculated (b) carried decays in uniaxially strained GaAs (2.7 GPa) at two different excitation levels. Dashed curves in both figures correspond to the ambient decays.
Experimental (a) and calculated (b) carried decays in the different GaAs sample at ambient conditions (Amb) and uniaxially compressed to 2.7 GPa.
Parameters used in simulations at ambient conditions.
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