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Modeling of carrier lifetimes in uniaxially strained GaAs
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10.1063/1.4717246
/content/aip/journal/jap/111/10/10.1063/1.4717246
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717246

Figures

Image of FIG. 1.
FIG. 1.

TRPL decays in [100] GaAs at ambient conditions (Amb) and under uniaxial strain compression at different longitudinal stresses (values shown in GPa units). Data reproduced from Ref. 17. Dashed lines indicate the three effective lifetime components common for highly excited GaAs. Dashed curve is the fit of the ambient decay using the developed carrier dynamics model.

Image of FIG. 2.
FIG. 2.

Calculated Δn(x) profiles in GaAs wafer at ambient conditions using the ΔnGT  = 1 × 1019 cm−3 excitation level. The profiles, showing a reduction in magnitude and an expansion in depth, are obtained at 0.5, 5, 30, 60, and 80 ns after the onset of the excitation pulse. Inset shows the temporal shape of the excitation pulse.

Image of FIG. 3.
FIG. 3.

Normalized PL spectra at ambient conditions during the excitation moment (solid curve) and at later times (dashed curve).

Image of FIG. 4.
FIG. 4.

Experimental (a) and calculated (b) carried decays at ambient conditions for excitation levels reduced by a factor of two starting from the highest excitation at ΔnGT  = 2 × 1019 cm−3. Dashed lines indicate various effective lifetimes.

Image of FIG. 5.
FIG. 5.

Carrier decay changes due to the parameters in different processes: (a) diffusion, (b) surface recombination, (c) generation, (d) and trapping. Dashed curves in all the figures correspond to the ambient decay in Fig. 1.

Image of FIG. 6.
FIG. 6.

Carrier decay changes due to the parameters in RR process (a) and (b) and NR process (c) and (d). Dashed curves in all the figures correspond to the ambient decay in Fig. 1.

Image of FIG. 7.
FIG. 7.

Experimental (a) and calculated (b) carried decays in uniaxially strained GaAs (2.7 GPa) at two different excitation levels. Dashed curves in both figures correspond to the ambient decays.

Image of FIG. 8.
FIG. 8.

Experimental (a) and calculated (b) carried decays in the different GaAs sample at ambient conditions (Amb) and uniaxially compressed to 2.7 GPa.

Tables

Generic image for table
Table I.

Parameters used in simulations at ambient conditions.

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/content/aip/journal/jap/111/10/10.1063/1.4717246
2012-05-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of carrier lifetimes in uniaxially strained GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717246
10.1063/1.4717246
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