XRD patterns of substrate, BTO thin films as-deposited and thermally treated at 600 °C for 30 min and 60 min, respectively.
SEM images of BTO thin films as-deposited (a, a') and thermally treated at 600 °C for 30 min (b, b') and 60 min(c, c'). (a)-(c) are observed with detector In-Lens (reflection of spatial information), and a'-c' with EsB (reflection of density/compositional contrast).
AFM images of surfaces of BTO thin films as-deposited (a) and thermally treated at 600 °C for 60 min (b, c). a and b are in high resolution; c is in low resolution.
Frequency dependence of dielectric constant (a) and loss tangent (b) for the as-deposited and annealed BTO films, measured at room temperature from 10−1 to105 Hz.
3-D pattern of dielectric properties for (a) BTO films as deposited and (b, c) thermally treated at 600 °C for 60 min.
ln (f m) versus 1000/T for the BTO thin films thermally treated at 600 °C for 60 min.
Complex dielectric spectra for the BTO films treated at 600 °C for 30 min (inset) and 60 min.
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