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Effect of oxygen vacancy on the dielectric relaxation of BaTiO3 thin films in a quenched state
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10.1063/1.4717758
/content/aip/journal/jap/111/10/10.1063/1.4717758
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717758
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Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of substrate, BTO thin films as-deposited and thermally treated at 600 °C for 30 min and 60 min, respectively.

Image of FIG. 2.
FIG. 2.

SEM images of BTO thin films as-deposited (a, a') and thermally treated at 600 °C for 30 min (b, b') and 60 min(c, c'). (a)-(c) are observed with detector In-Lens (reflection of spatial information), and a'-c' with EsB (reflection of density/compositional contrast).

Image of FIG. 3.
FIG. 3.

AFM images of surfaces of BTO thin films as-deposited (a) and thermally treated at 600 °C for 60 min (b, c). a and b are in high resolution; c is in low resolution.

Image of FIG. 4.
FIG. 4.

Frequency dependence of dielectric constant (a) and loss tangent (b) for the as-deposited and annealed BTO films, measured at room temperature from 10−1 to105 Hz.

Image of FIG. 5.
FIG. 5.

3-D pattern of dielectric properties for (a) BTO films as deposited and (b, c) thermally treated at 600 °C for 60 min.

Image of FIG. 6.
FIG. 6.

ln (f m) versus 1000/T for the BTO thin films thermally treated at 600 °C for 60 min.

Image of FIG. 7.
FIG. 7.

Complex dielectric spectra for the BTO films treated at 600 °C for 30 min (inset) and 60 min.

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/content/aip/journal/jap/111/10/10.1063/1.4717758
2012-05-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen vacancy on the dielectric relaxation of BaTiO3 thin films in a quenched state
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717758
10.1063/1.4717758
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