Normalized PL spectra for samples 1 (a) and 2 (b) as a function of the excitation power.
PL peak positions for samples 1 and 2 as a function of the cube of the excitation power (a) and temperature (b) (dashed lines and a blue dotty line represent InAs and GaAs bulk, respectively)
PL decay curves at 10 K as a function of Sb compositions (inset: carrier lifetimes as a function of Sb compositions).
Schematic band structures of InAs QDs embedded in GaAs0.87Sb0.13 (a) and GaAs0.85Sb0.15 (b) (inset: PL spectra of samples 1 and 2 fitted with Gaussian distribution curves).
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