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Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
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10.1063/1.4717766
/content/aip/journal/jap/111/10/10.1063/1.4717766
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717766
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized PL spectra for samples 1 (a) and 2 (b) as a function of the excitation power.

Image of FIG. 2.
FIG. 2.

PL peak positions for samples 1 and 2 as a function of the cube of the excitation power (a) and temperature (b) (dashed lines and a blue dotty line represent InAs and GaAs bulk, respectively)

Image of FIG. 3.
FIG. 3.

PL decay curves at 10 K as a function of Sb compositions (inset: carrier lifetimes as a function of Sb compositions).

Image of FIG. 4.
FIG. 4.

Schematic band structures of InAs QDs embedded in GaAs0.87Sb0.13 (a) and GaAs0.85Sb0.15 (b) (inset: PL spectra of samples 1 and 2 fitted with Gaussian distribution curves).

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/content/aip/journal/jap/111/10/10.1063/1.4717766
2012-05-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4717766
10.1063/1.4717766
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