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Microstructure analysis of novel ternary NiSi2−xAlx silicide layers on Si(001) formed by solid-state reaction
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10.1063/1.4718008
/content/aip/journal/jap/111/10/10.1063/1.4718008
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4718008
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Figures

Image of FIG. 1.
FIG. 1.

(a) HAADF STEM image of sample with z = 0.1 after annealing at 500 °C; (b) EDXS line scan across the NiSi layer along the black arrow marked in the STEM image in (a); (c) HRTEM image showing the A-type oriented disilicide crystallite; (d) Al peak in EDX point spectra at the positions marked by circles 1 (solid line) and 2 (dashed line) in the STEM image (a) and the sketch of the NiSi2−xAlx crystallite explaining the projection effect; (e) sketch of the formation mechanism of ternary NiSi2−xAlx for low Al contents (z ∼ 0.1) during 500 °C annealing.

Image of FIG. 2.
FIG. 2.

(a) HAADF STEM image of a sample with z = 0.4 after annealing at 500 °C; (b) HRTEM image of the top layers of the sample; (c) electron diffraction analysis in Si[001] zone axis showing the presence of epitaxial disilicide and polycrystalline cubic NiSi0.5Al0.5; (d) EDXS line scan showing the distribution of elements in the layers; (e) sketch of the formation mechanism of NiSi2−xAlx layers with an inhomogeneous Al distribution. The arrow length demonstrates the different diffusivity of the Al, Si, and Ni atoms.

Image of FIG. 3.
FIG. 3.

(a) HAADF STEM images showing cross-sections of NiSi2−xAlx layers with different Al content after annealing at 900 °C; (b) Maximum peak-to-valley values of interfacial roughness of NiSi2−xAlx layers as a function of the Al content; (c) HRTEM image showing the amorphous Al oxide layer at the NiSi2−xAlx surface.

Image of FIG. 4.
FIG. 4.

RBS spectra measured at NiSi2−xAlx layers obtained after annealing at 900 °C for (a) z = 0.35 and (b) z = 0.6.

Image of FIG. 5.
FIG. 5.

(a) Al content in NiSi2−xAlx layers determined using EDXS analysis. (b) HRTEM image of the NiSi2−xAlx(001)/Si(001) interface formed at z = 0.4 after a 900 °C annealing. The white arrow indicates an interfacial step. (c) εxx in-plane strain distribution obtained by GPA analysis shows the presence of interfacial dislocations. (d) Fourier filtered image of a fragment of the NiSi2−xAlx(001)/Si(001) interface that visualizes an extra atomic plane in Si. (e) Schematic arrangement of extra atomic planes of the interfacial dislocations for the case of different ratios between the film and the substrate lattice planes.

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/content/aip/journal/jap/111/10/10.1063/1.4718008
2012-05-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructure analysis of novel ternary NiSi2−xAlx silicide layers on Si(001) formed by solid-state reaction
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4718008
10.1063/1.4718008
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