1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancing hole mobility in III-V semiconductors
Rent:
Rent this article for
USD
10.1063/1.4718381
/content/aip/journal/jap/111/10/10.1063/1.4718381
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4718381

Figures

Image of FIG. 1.
FIG. 1.

VBO, amount of strain, effective mass (m*) and splitting (Δ lh-hh ) between the light hole (lh) and heavy hole (hh) offsets are important parameters for obtaining high hole mobility in III-V heterostructures.

Image of FIG. 2.
FIG. 2.

Isoenergy surfaces for upper valence band in silicon, GaAs and InSb at 2 meV/25 meV/50 meV.

Image of FIG. 3.
FIG. 3.

Isoenergy surface (left) and 2D energy contour along the transport plane (right) for upper valence band in GaAs for (a) biaxial compression and (b) uniaxial compression.

Image of FIG. 4.
FIG. 4.

Calculated hole mobility for varying stoichiometries in InxGa1−xAs and InxGa1−xSb. Antimonides have twice as high hole mobility compared to arsenides.

Image of FIG. 5.
FIG. 5.

Polar plot showing calculated hole mobility enhancement for (a) 2% biaxial strain and (b) 2% uniaxial strain. Hollow/solid symbols represent tension/compression. The substrate orientation was (100) while the angle along the plot represents the different directions along which the channel of the transistor can be oriented. For uniaxial strain, the strain was applied parallel to the transport direction.

Image of FIG. 6.
FIG. 6.

Calculated mobility enhancement for varying amount of biaxial strain, which can be achieved during MBE growth. Positive values represent biaxial compression while negative strain represents biaxial tension.

Image of FIG. 7.
FIG. 7.

Two different approaches for obtaining a compressively strain Sb-channel. Approach A uses an InGaSb channel and an AlGaSb barrier. Approach B utilizes a GaSb channel and an AlAsSb barrier.

Image of FIG. 8.
FIG. 8.

Cross-section showing the different layers in a quantum-well heterostructure with (a) InxGa1−xSb and (b) GaSb channel. The AlAsxSb1−x layer is composed of a AlSb/AlAs short-period superlattice. Also shown are high resolution TEM images around the channel region.

Image of FIG. 9.
FIG. 9.

(a) Dislocations and (b) misfit defects in the buffer layer which accommodates the large lattice mismatch between the channel and the GaAs substrate.

Image of FIG. 10.
FIG. 10.

High Resolution XRD scans on the samples A1 (top) and B1 (bottom) near the (004) GaAs peak. For sample B1, which uses (AlAs)AlSb as the buffer, we observe main and satellite peaks characteristic of the digital superlattice.

Image of FIG. 11.
FIG. 11.

Reciprocal lattice scan on sample B1 around GaAs (004) and(115).

Image of FIG. 12.
FIG. 12.

VBO for sample A1 (approach A) is calculated by taking the difference in the valence band spectrum from the InxGa1−xSb channel and AlyGa1−ySb buffer.

Image of FIG. 13.
FIG. 13.

VBO for sample B1 (approach B) is calculated by taking the difference in the valence band spectrum from the GaSb channel and the AlAsySb1−y buffer.

Image of FIG. 14.
FIG. 14.

Hole mobility (μ h) and sheet charge (Ns) are measured as a function of temperature using Hall measurements for samples: A1, A2, A3 (top) and B1, B2 (bottom).

Image of FIG. 15.
FIG. 15.

A high temperature anneal (600 °C/60 s) before channel growth to optimize the interface results in a large increase in low-temperature mobility but gives only a slight gain (900 cm2/Vs to 940 cm2/Vs) in mobility at 300 K.

Image of FIG. 16.
FIG. 16.

Conductivity tensors (σxx and σxx) are measured as a function of magnetic field (B) for various temperatures. MSA on the data confirms that there is no parallel conduction in the stack and is used to estimate number of carriers in lh/hh bands and their mobility (Figure 17).

Image of FIG. 17.
FIG. 17.

(a) Number and (b) mobility of carriers in the light (lh) and heavy hole (hh) bands as a function of temperature for sample A1.

Image of FIG. 18.
FIG. 18.

Shubnikov-de-Haas (SdH) oscillations in sheet resistance (inset) are observed at low temperatures and high magnetic field. Temperature dependence of these oscillations is used to calculate m* (Table III).

Image of FIG. 19.
FIG. 19.

SdH oscillations at 2 K are plotted vs. 1/B for a sheet charge of 1.1 × 1012/cm2. The oscillatory behavior is periodic in nature with a single dominant frequency, indicating that only the lh band is occupied at this sheet charge.

Image of FIG. 20.
FIG. 20.

SdH oscillations at 2 K are plotted vs. 1/B for sheet charge of 3.5 × 1012/cm2. The oscillations are combinations of two dominant frequencies, indicating that both lh and hh bands are occupied at this sheet charge.

Image of FIG. 21.
FIG. 21.

Hole mobility (μ h) is measured as a function of sheet charge (Ns) using gated Hall measurements. Reported values in (strained) silicon are also plotted for comparison.

Tables

Generic image for table
Table I.

Relevant properties of different semiconductor materials at 300 K. Note that III-V’s (antimonides in particular) have lower elasticity constants than silicon.

Generic image for table
Table II.

Parameters measured, technique used, and corresponding figures.

Generic image for table
Table III.

Details on the samples studied. Mobility and sheet charge (NS) at 300 K measured using Hall measurements are listed along with value of light hole effective mass measured using Shubnikov–de Haas oscillations.

Loading

Article metrics loading...

/content/aip/journal/jap/111/10/10.1063/1.4718381
2012-05-21
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancing hole mobility in III-V semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4718381
10.1063/1.4718381
SEARCH_EXPAND_ITEM