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Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics
1. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, 1992).
2. J. W. Orton and P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic, 1990).
3. S. Sze and K. K. Ng, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 2007).
4. D. C. Look, in Semi-Conductors and Semi-Metals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1983).
5. K. Harafuji, T. Tsuchiya, and K. Kawamura, “Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal,” J. Appl. Phys. 96, 2501 (2004).
6. I. Akasaki and H. Amano, “Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters,” Jpn. J. Appl. Phys., Part 1 36, 5393–5408 (1997).
8. R. Mamazza, Jr., D. L. Morel, and C. S. Ferekides, “Transparent conducting oxide thin films of Cd2SnO4 prepared by RF magnetron co-sputtering of the constituent binary oxides,” Thin solid Films 484(1–2), 26–33 (2005).
10. T. A. Gessert, W. K. Metzger, P. Dippo, S. E. Asher, R. G. Dhere, and M. R. Young, “Dependence of carrier lifetime on copper-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells,” Thin Solid Films 517, 2370–2373 (2009).
11. F. Seymour, “Studies of electronic states controlling the performance of CdTe solar cells”, Ph.D. dissertation (Colorado School of Mines, 2005), p. 35.
13. C. Kittel and H. Kroemer, Thermal Physics, 2nd ed. (Freeman, New York, 1980).
14. S. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).
18. W. Meyer and H. Z. Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937).
19. K. K. Chin, “Approximate graphical method for solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors,” J. Semicond. 32(6), 062001 (2011).
20. K. K. Chin, “Local charge neutrality condition, Fermi level, and majority carrier density of semiconductor with multiple localized multi-level native/impurity defects,” J. Semicond. 32(11), 112001 (2011).
21. D. Macdonald and L. J. Geerligs, “Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon,” Appl. Phys. Lett. 85(18), 4061 (2004).
22. J. Schmidt and D. Macdonald, “Recombination activity of iron-gallium and iron-indium pairs in silicon,” J. Appl. Phys. 97, 113712 (2005).
24. D. Debuf, “General theory of carrier lifetime in semiconductors with multiple localized states,” J. Appl. Phys. 96(11), 6454 (2004).
26.See, for example, AMPS-1D Manual, the Center for Nanotechnology Education and Utilization, the Pennsylvania State University, University Park, PA 16802.
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