1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
Rent:
Rent this article for
USD
10.1063/1.4719052
/content/aip/journal/jap/111/10/10.1063/1.4719052
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4719052
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Control and LT-undoped rocking curves for the as-grown and annealed (350–600 °C) samples. The rocking curves are referenced to the substrate peak. The inset shows the zoomed in area of the 0th order QW satellite peak for the LT-Undoped sample. The shift in the peak position is clearly seen and the arrow indicates the trend with annealing temperature.

Image of FIG. 2.
FIG. 2.

PL spectra as a function of annealing temperature for the control sample (VMBE1993). A strong PL signal is shown at 1.55 μm which decreases as the annealing temperature is increased. The inset shows the PL response of the LT undoped sample (VMBE2001).

Image of FIG. 3.
FIG. 3.

Noise spectra as a function of annealing for the samples doped throughout the structure (VMBE) and the samples with modulated doping (XMBE).

Image of FIG. 4.
FIG. 4.

Absorption spectra of InGAs/InAlAs MQWs at room temperature for the (a) normal temperature growth VMBE as-grown sample and (b) LT VMBE undoped and LT VMBE heavily doped as-grown samples.

Image of FIG. 5.
FIG. 5.

(a) Room temperature absorption spectrum for the heavily doped XMBE as-grown samples. (b) Relevant absorption coefficient. The absorption coefficient was calculated using the total well thickness (7000 Å).

Image of FIG. 6.
FIG. 6.

Hall effect results for the VMBE samples showing the effect of the Be incorporation and the post growth annealing in the carrier concentration and mobility.

Image of FIG. 7.
FIG. 7.

Hall effect results for the XMBE samples showing the effect of the Be incorporation and the post growth annealing in the carrier concentration and mobility.

Image of FIG. 8.
FIG. 8.

Sheet resistance as a function of annealing for the LT undoped and heavily doped samples compared with the values of the LT GaAs and the highest reported in the literature.

Image of FIG. 9.
FIG. 9.

Carrier dynamics for the three samples that provided the desired optical and electrical characteristics for prospective THz emitters and detectors.

Image of FIG. 10.
FIG. 10.

Carrier lifetime as a function of annealing temperature for the low doped and heavily doped VMBE samples. Note the different time scales used in the figure.

Loading

Article metrics loading...

/content/aip/journal/jap/111/10/10.1063/1.4719052
2012-05-21
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4719052
10.1063/1.4719052
SEARCH_EXPAND_ITEM