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Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
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10.1063/1.4719052
/content/aip/journal/jap/111/10/10.1063/1.4719052
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4719052
/content/aip/journal/jap/111/10/10.1063/1.4719052
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/content/aip/journal/jap/111/10/10.1063/1.4719052
2012-05-21
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4719052
10.1063/1.4719052
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