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Spin and valley dependent electronic transport in strain engineered graphene
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10.1063/1.4720386
/content/aip/journal/jap/111/10/10.1063/1.4720386
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4720386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The conductance [in units of ] as a function of AS . The parameters are nm, nm, and E = 20 mev.

Image of FIG. 2.
FIG. 2.

Kinematical construction of the electronic transmission through the junction. Here (a) and (b) with .

Image of FIG. 3.
FIG. 3.

The conductance (in units of ) (a) and MR (b) as a function of A S . Here, we take nm, mev, and mev.

Image of FIG. 4.
FIG. 4.

Kinematical construction of the electronic transmission through the junction in the P (a) and A (b) magnetization configurations with .

Image of FIG. 5.
FIG. 5.

The conductance (in units of ) (MR in the inset) as a function of AS . Here, we take a = 1 nm and the other parameters are the same as in Fig. 3.

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/content/aip/journal/jap/111/10/10.1063/1.4720386
2012-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin and valley dependent electronic transport in strain engineered graphene
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4720386
10.1063/1.4720386
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