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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors
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10.1063/1.4720940
/content/aip/journal/jap/111/10/10.1063/1.4720940
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4720940
/content/aip/journal/jap/111/10/10.1063/1.4720940
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/content/aip/journal/jap/111/10/10.1063/1.4720940
2012-05-25
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4720940
10.1063/1.4720940
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