1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells
Rent:
Rent this article for
USD
10.1063/1.4721367
/content/aip/journal/jap/111/10/10.1063/1.4721367
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4721367
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Multiple characterizations of the final layer of the buffer as a function of the phosphine partial pressure. (a) RMS roughness from 100 μm × 100 μm area, measured by AFM. (b) Threading defect density measured from cathodoluminesence measurements. (c) FWHM of the XRD RSM peaks from (110) incidence and ω rotation. (d) Stress-thickness product at the end of growth, and (e) residual strain of the overshoot buffer, both measured at growth temperature by in situ wafer curvature.

Image of FIG. 2.
FIG. 2.

An example AFM image showing the crosshatch roughness that develops during the course of the growth of a compositionally graded buffer. This sample was grown using a phosphine partial pressure of 5.5 Torr and at a growth rate of 4.4 μm/h.

Image of FIG. 3.
FIG. 3.

Cathodoluminescence intensity maps of samples with a growth rate of 4.4 μm/h and phosphine partial pressures of (a) 2.8 Torr and (b) 9.5 Torr. The brightness of the image corresponds with the intensity of the luminescence at that point. Threading dislocations are dark spots in the image, some examples of which are identified by overlaid green circles.

Image of FIG. 4.
FIG. 4.

Stress-thickness product throughout growth of GaInP compositionally graded buffers. The three growths shown have identical structure, shown in the above diagram, but varied phosphine partial pressure throughout growth. The green vertical lines separate the various layers of the CGB.

Image of FIG. 5.
FIG. 5.

Characterizations of the final layer of the buffer as a function of the growth rate. (a) RMS roughness from 100 μm × 100 μm area, measured by AFM. (b) Threading defect density measured from cathodoluminesence measurements.

Image of FIG. 6.
FIG. 6.

(a) Light J-V curve of a mismatched solar cell grown using conditions that minimize roughness. (b) Internal quantum efficiency of the same mismatched solar cell. The internal quantum efficiency compensates for reflectance and grid obscuration.

Loading

Article metrics loading...

/content/aip/journal/jap/111/10/10.1063/1.4721367
2012-05-29
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4721367
10.1063/1.4721367
SEARCH_EXPAND_ITEM