(a) XRD spectra of pentacene films grown at different deposition rates. AFM images of pentacene films deposited at (b) 0.05 and (c) 0.3 nm s−1.
(a) Schematic illustration of the capacitance measurement setup. (b) C-V curves for the fabricated MIS capacitor according to the voltage sweep direction at different frequencies. The insets represent equivalent circuits for accumulation and depletion regions in the C-V curve.
(a) Output characteristics of FETs fabricated with two different deposition rates of pentacene molecules. The inset shows the schematic representation of the fabricated FET. Transfer characteristics of devices with pentacene deposition rate of (b) 0.05 and (c) 0.3 nm s−1.
(a) Levinson plots and (b) time-dependent ID decay curves of the two different pentacene FETs.
(a) Driving schemes of VG and VD . Variations of ID under dynamic on/off switching of FETs with pulse duty ratio of (b) 1/2 and (c) 2/3.
Device parameters related the deposition rate of pentacene molecules.
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