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Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries
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10.1063/1.4721676
/content/aip/journal/jap/111/10/10.1063/1.4721676
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4721676

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD spectra of pentacene films grown at different deposition rates. AFM images of pentacene films deposited at (b) 0.05 and (c) 0.3 nm s−1.

Image of FIG. 2.
FIG. 2.

(a) Schematic illustration of the capacitance measurement setup. (b) C-V curves for the fabricated MIS capacitor according to the voltage sweep direction at different frequencies. The insets represent equivalent circuits for accumulation and depletion regions in the C-V curve.

Image of FIG. 3.
FIG. 3.

(a) Output characteristics of FETs fabricated with two different deposition rates of pentacene molecules. The inset shows the schematic representation of the fabricated FET. Transfer characteristics of devices with pentacene deposition rate of (b) 0.05 and (c) 0.3 nm s−1.

Image of FIG. 4.
FIG. 4.

(a) Levinson plots and (b) time-dependent ID decay curves of the two different pentacene FETs.

Image of FIG. 5.
FIG. 5.

(a) Driving schemes of VG and VD . Variations of ID under dynamic on/off switching of FETs with pulse duty ratio of (b) 1/2 and (c) 2/3.

Tables

Generic image for table
Table I.

Device parameters related the deposition rate of pentacene molecules.

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/content/aip/journal/jap/111/10/10.1063/1.4721676
2012-05-25
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4721676
10.1063/1.4721676
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