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Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC
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10.1063/1.4723648
/content/aip/journal/jap/111/10/10.1063/1.4723648
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4723648

Figures

Image of FIG. 1.
FIG. 1.

Plot of the twist angle dependence of the energy of twist GB per unit area in 3C-SiC.

Image of FIG. 2.
FIG. 2.

Schematic view of the geometrical setup of the indenter and the substrate.

Image of FIG. 3.
FIG. 3.

Representations and distributions of vacancies (white sphere), antisites (red sphere), and interstitials (green sphere) in the bicrystal (a) and the reference single crystalline 3C-SiC (b).

Image of FIG. 4.
FIG. 4.

Pressure-depth (P-h) curves of the bicrystal at different irradiation doses (a). Loading and unloading curves of the bicrystal irradiated at a dose of 0.03 dpa (b).

Image of FIG. 5.
FIG. 5.

Arrhenius plots of the lifetime required for C atoms which hop along the 〈110〉 direction at different irradiation doses as a function of temperature. Each point represents the mean value from 5 simulations. The lines represent the best fit of Eq. (2) to the data.

Image of FIG. 6.
FIG. 6.

The critical depth for GB sliding of both bicrystals as a function of the irradiation dose. The inset shows the snapshots of the GB sliding process in the nonirradiated bicrystal during indentation.

Image of FIG. 7.
FIG. 7.

Snapshots showing the interaction between dislocation motions and the GB in the bicrystal at 0 dpa (a) and (b) and 0.12 dpa (c) and (d), together with the disordered cluster rearrangements captured at 0.12 dpa (e). Red atoms are the surfaces and GB regions of the simulation box. Other atoms are colored according to their relative displacement to their neighboring atoms. Black arrows in (e) represent the relative-displacement vectors.

Image of FIG. 8.
FIG. 8.

The probability that one dislocation that bumps into the GB can traverse it, along with the total number of dislocations formed during indentation.

Image of FIG. 9.
FIG. 9.

Plots of strain-rate sensitivity m, as a function of the irradiation dose. The inset shows the stress-strain curves of the nonirradiated bicrystal at different strain rates.

Image of FIG. 10.
FIG. 10.

The internal energies of the grain and GB regions with respect to the irradiation dose compared with the internal energies of crystalline and amorphous 3C-SiC.

Tables

Generic image for table
Table I.

The hardness obtained from P-h curves for the bicrystal at different irradiation doses.

Generic image for table
Table II.

The migration energy barrier and pre-exponential factor of C atoms in the GB region at different irradiation doses.

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/content/aip/journal/jap/111/10/10.1063/1.4723648
2012-05-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/10/10.1063/1.4723648
10.1063/1.4723648
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