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(a) A schematic view of the in situ TEM characterization setup. The W-tip is controlled by a 3D piezomotor and Pt electrode is grounded. The SiO2/Si substrate is not shown. (b) An I-V sweep loop (0→5 V →−5 V→0) for W-tip/PCMO/Pt device measured inside TEM. The sweep sequence is 1→2→3→4.
(a) A TEM image of W-tip/PCMO/Pt devices. Inset is the resistance of the device versus time under −5 V bias and the thick solid line curve is used to shows the trend. (b) A zoom-in image of the selected region of the PCMO film marked in (a). (c) A zoom-in and time-dependent image of selected region marked in (b) under the electric field applied through the W-tip. The field intensity is estimated ∼9 × 106 V·m−1. The dot curves sketch the boundary of stripe domain. The white arrows indicate the electric field directions. An electron energy of 200 keV was used for TEM imaging.
A series of TEM images for the decaying electric-field-induced stripes in a crystalline grain of PCMO film. The evolution started right after the applied electric field (∼9 × 106 V·m−1) was removed. The crystalline orientation of the imaged grain is marked in panel (f). The inset is the corresponding FFT pattern.
(a) I-V hysteresis of Ag-Paint/PCMO/Pt; (b) Resistance relaxation after applying only positive sweep loop; Temperature-dependent I-V hysteresis in (c) linear and (d) logarithmic scale.
(a) Zoom-in image of stripes in Fig. 2(c), showing a p(3 × 1) stripe superstructure along  direction; (b) The structural model in (1–10)P-plane view ofprimitive lattice in pseudo cubic perovskite (ABO3) structure; A possible A3B3O8 oxygen vacancy model in (c) (110)P- and (d) (1–10)P-plane view.
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