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Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch
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10.1063/1.4725474
/content/aip/journal/jap/111/11/10.1063/1.4725474
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/11/10.1063/1.4725474

Figures

Image of FIG. 1.
FIG. 1.

Side view of a cylindrical wurtzite In x Ga1 x N/GaN strained coupled QD NWHET.

Image of FIG. 2.
FIG. 2.

Absolute values of the built-in electric field in the In0.15Ga0.85N QDs and in the GaN barrier layer along the z-direction asa function of the hydrostatic pressure (a) ( and ), the QD height (b) () and the barrier thickness (c) () in wurtzite In0.15Ga0.85 N/GaN strained coupled QD NWHETs with the QD radius .

Image of FIG. 3.
FIG. 3.

Conduction and valence band edges of a wurtzite In0.15Ga0.85N/GaN strained coupled QD NWHET and the related electron and hole wave functions under different hydrostatic pressures. The solid (dashed) line is for the (8) GPa case. The built-in electric fields in the In0.15 Ga0.85 N QDs and in the GaN barrier layer are denoted as and , respectively.

Image of FIG. 4.
FIG. 4.

The heavy-hole exciton binding energy (a), the emission wavelength (b), and the radiative decay time (c) as a function of the hydrostatic pressure P in cylindrical wurtzite In0.15Ga0.85N/GaN strained coupled QD NWHETs with the QD height and the barrier thickness . For comparison, the exciton binding energy without the dielectric-constant mismatch is also given in (a).

Image of FIG. 5.
FIG. 5.

The heavy-hole exciton binding energy (a), the emission wavelength (b), and the radiative decay time (c) as a function of the QD height in cylindrical wurtzite In0.15Ga0.85N/GaN strained coupled QD NWHETs with the QD radius in (a) and (c) and barrier thickness under different hydrostatic pressures.

Image of FIG. 6.
FIG. 6.

The heavy-hole exciton binding energy (a), the emission wavelength (b), and the radiative decay time (c) as a function of the barrier thickness in cylindrical wurtzite In0.15Ga0.85N/GaN strained coupled QD NWHETs with the QD radius and height under different hydrostatic pressures. Here, the strong BEF and dielectric mismatch effects are included.

Tables

Generic image for table
Table I.

Lattice constants a and c (), band gap (eV) and its pressure-dependent coefficients α () and β (), ionicity f, elastic constants , , , and (GPa), and effective masses and for wurtzite GaN and InN.

Generic image for table
Table II.

The Born effective charge , piezoelectric constants and (), phonon frequencies and (cm 1), the Grüneisen parameters γ, high frequency dielectric constant and the bulk modulus and its pressure derivative for wurtzite GaN and InN.

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/content/aip/journal/jap/111/11/10.1063/1.4725474
2012-06-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/11/10.1063/1.4725474
10.1063/1.4725474
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