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Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers
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10.1063/1.4729077
/content/aip/journal/jap/111/11/10.1063/1.4729077
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/11/10.1063/1.4729077
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Figures

Image of FIG. 1.
FIG. 1.

TEM micrographs showing (a) ⟨011⟩ zone axis bright-field TEM image and (b) {200} two-beam dark-field TEM image of the test Si/SiGe island multilayer nanostructure. The SiGe island layers are clearly seen as dark areas in (a).

Image of FIG. 2.
FIG. 2.

A dark field TEM image showing sample area with a single dislocation started at the bottom of the Si/SiGe island multilayers. Inset shows the highlighted area under greater magnification. Note that the dislocation does not reach the sample surface.

Image of FIG. 3.
FIG. 3.

A high angle annular dark field scanning transmission electron microscope (HAADF-STEM) micrograph showing (a) top and (b) second bottom SiGe cluster layers (counting from the Si substrate). The EDX scan positions are shown by arrows.

Image of FIG. 4.
FIG. 4.

EDX measured Ge atomic concentration at top and second bottom Si/SiGe cluster layer heterointerfaces. The lines are guides for the eye.

Image of FIG. 5.
FIG. 5.

(a) Normalized PL spectra (shifted for clarity) collected using an InGaAs PMT under different (indicated) excitation wavelengths. (b) Normalized PL spectra recorded using an IR-enhanced InGaAs photodetector with the long wavelength cutoff at ∼0.55 eV.

Image of FIG. 6.
FIG. 6.

The PL intensity as function of the calculated photoexcitation penetration depth. Different PL spectral (c-Si PL, D-lines PL, etc.) and structural features (c-Si substrate, dislocation) are indicated and their position in depth is shown.

Image of FIG. 7.
FIG. 7.

Schematic showing the dependence of the PL spectral line width on the Si/SiGe heterointerface abruptness.

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/content/aip/journal/jap/111/11/10.1063/1.4729077
2012-06-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/11/10.1063/1.4729077
10.1063/1.4729077
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