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Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy
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10.1063/1.4729057
/content/aip/journal/jap/111/12/10.1063/1.4729057
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729057

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the mesoplasma epitaxy from the Si nanocluster precursors.

Image of FIG. 2.
FIG. 2.

Change in the RDF of 216 Si atoms cooling from 3000 K to 300 K at a rate of 2.7 × 1012 K/s.

Image of FIG. 3.
FIG. 3.

Change in the (a) I2/I1 and (b) r2 of the RDF for the Si clusters with different number of constituent atoms during cooling from 3000 K to 300 K at a rate of 2.7 × 1012 K/s.

Image of FIG. 4.
FIG. 4.

Snapshots of the structure of Si with different number densities (nm−3) at 1000 K during cooling from 3000 K at a rate of 2.7 × 1012 K/s.

Image of FIG. 5.
FIG. 5.

Number and average size of Si clusters formed at 1000 K during cooling from 3000 K at a rate of 2.7 × 1012 K/s for the different initial Si atoms in the test cell. The inset histogram is the cluster size distribution for each initial Si atom case.

Image of FIG. 6.
FIG. 6.

Snapshots of the interaction between Si cluster and Si(100) substrate. Clusters with (a) 216 and (f) 1000 atoms before impingement. Clusters with a velocity of 10 m/s toward the substrate at (b) and (g) 500 K, (c) and (h) 800 K, and (d) and (i) 1000 K, respectively, after 20ps of impingement. (e) and (j) Clusters with a velocity of 100 m/s toward the substrate at 1000 K after 20 ps of impingement.

Tables

Generic image for table
Table I.

Potential parameters employed in the simulation.

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/content/aip/journal/jap/111/12/10.1063/1.4729057
2012-06-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729057
10.1063/1.4729057
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