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On the oscillator strength in dilute nitride quantum wells on GaAs
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10.1063/1.4729320
/content/aip/journal/jap/111/12/10.1063/1.4729320
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729320

Figures

Image of FIG. 1.
FIG. 1.

Calculated dependence of transition energy e 1h 1 for a 7 nm width QW on nitrogen content for x = 35% of In concentration at 300 K. The transition in In x Ga1− x As1− y N y /GaAs QW is indicated by the short-dashed curve. The red solid line denotes the transition in In x Ga1− x As1− y N y //GaAs QW for the band offset ratio , while the blue dashed-dotted line corresponds to the transition in In x Ga1− x As1− y N y //GaAs for the band offset ratio .

Image of FIG. 2.
FIG. 2.

Conduction edge (black), valence band edge for heavy hole (red) and squared ground state wave function of electron (black) and heavy hole (red) for the QW of In0.35Ga0.65As1− y N y /GaAs in panels (a) and(b) and In0.35Ga0.65 As1− y N y //GaAs in panels (c)-(f).

Image of FIG. 3.
FIG. 3.

Effect of increasing N mole fraction on the squared overlap integral between the ground states of electron e 1 and heavy hole h 1 for the indicated value of . The unstrained conduction band offset for the In x Ga1− x As1− y N y /GaAs is Qc  = 83%. The dashed line presents results for the system of In0.35Ga0.65 As1− y N y /GaAs QW, while the solid line presents results for In0.35Ga0.65As1− y N y //GaAs QW.

Image of FIG. 4.
FIG. 4.

Oscillator strength of the fundamental QW exciton state as a function of N mole fraction in In0.35Ga0.65 As1− y N y for the indicated value of . The dashed line presents results for the system In0.35Ga0.65As1− y N y /GaAs, while the solid line presents results for the system In0.35Ga0.65 As1− y N y //GaAs.

Tables

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Table I.

Parameters for binary compounds used in the band structure calculation.22

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/content/aip/journal/jap/111/12/10.1063/1.4729320
2012-06-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the oscillator strength in dilute nitride quantum wells on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729320
10.1063/1.4729320
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