1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature
Rent:
Rent this article for
USD
10.1063/1.4729490
/content/aip/journal/jap/111/12/10.1063/1.4729490
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729490
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM bright field image of SNO film of ∼18 nm thickness deposited on LAO. (b) HRTEM image of substrate/film interface. Inset: FFT patterns taken from both areas indicate oriented crystal structures.

Image of FIG. 2.
FIG. 2.

(a) 2θ-θ XRD scan of (002) pseudocubic reflections of LAO and SNO, verifying deposition of SNO phase. (b) Resistivity versus temperature of LAO/SNO. Reversible MIT observed at 405 K, negligible hysteresis between heating and cooling curves.

Image of FIG. 3.
FIG. 3.

(a) Two-terminal resistance versus temperature of LAO/SNO for device with W/L = 300/700 μm/μm. MIT observed at 380 K. (b) Solid black line: Room temperature I-V measurement from same device as measured in (a). Dashed blue line: dc resistance V/I computed from I-V measurement. Upturn in resistance above V c ≈ 22 V is evidence of electrically driven MIT. Inset: V/I versus V for device with W/L = 340/20 μm/μm showing transition at lower voltage.

Image of FIG. 4.
FIG. 4.

(a) Static resistance V/I versus applied power V·I (dashed red line, measurement at 300 K) overlaid with R-T curve (solid black line) from same device on same ordinate scale. Line shapes and resistance values are in good agreement. Inset: (blue circles) Mapping of temperature to power according to resistance values and line shapes of R-P and R-T curves. Solid green line: Modeling of T-P map by Joule heating as in Eq. (3). (b) Static resistance versus applied power at heating stage temperatures from 300 to 400 K. Critical power, at which upturn in resistance occurs, decreases with increasing temperature and is no longer defined above T MIT. Inset: Critical power versus heating stage temperature (black squares) and linear fit to data (red line), verifying linear relationship between applied power and temperature as in Eq. (3).

Loading

Article metrics loading...

/content/aip/journal/jap/111/12/10.1063/1.4729490
2012-06-18
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729490
10.1063/1.4729490
SEARCH_EXPAND_ITEM