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High-temperature gold metallization for ZnO nanowire device on a SiC substrate
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10.1063/1.4729802
/content/aip/journal/jap/111/12/10.1063/1.4729802
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729802
/content/aip/journal/jap/111/12/10.1063/1.4729802
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/content/aip/journal/jap/111/12/10.1063/1.4729802
2012-06-19
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-temperature gold metallization for ZnO nanowire device on a SiC substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729802
10.1063/1.4729802
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