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High-temperature gold metallization for ZnO nanowire device on a SiC substrate
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10.1063/1.4729802
/content/aip/journal/jap/111/12/10.1063/1.4729802
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729802
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Figures

Image of FIG. 1.
FIG. 1.

ZnO nanowire device incorporating a Ti\Au metallization on a SiC substrate: (a) schematic drawing, (b) SEM image before, and (c) after an accidental electrostatic discharge. The metallization is seen to melt close to the contact with the nanowire, while the nanowire remains intact. Bar is 2 μm.

Image of FIG. 2.
FIG. 2.

Backscattering spectra of (a) 210 nm-thick Au film on 4H-SiC before and after 30 min annealing in vacuum at 500 °C, (b) 210 nm-thick Au film on 20 nm thick Ti on 4H-SiC before and after 30 min annealing in vacuum at 500 °C, (c) 200 nm-thick Au film on a 100 nm thick TiSiN barrier layer and 20 nm thick Ti on 4H-SiC before and after 30 min annealing in vacuum at 850 °C, and (d) sample of the same sequence annealed in Ar at 500 °C for 5 days. Arrows mark the surface energies of C, N, Si, Ti, and Au.

Image of FIG. 3.
FIG. 3.

X-ray photoelectron spectroscopy depth profiles of Ti(2p2/3) and N(1s) in samples incorporating the Ti-Si-N barrier before and after annealing in vacuum at 850 °C, showing diffusion of nitrogen from the barrier into the Ti adhesion layer.

Image of FIG. 4.
FIG. 4.

Current voltage characteristics comparing a device with the Ti\Au metallization (open circles) and one incorporating a TiSiN barrier layer (filled circles). Inset shows a post-measurement image of the Ti/Au device. Bar is 2 μm.

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/content/aip/journal/jap/111/12/10.1063/1.4729802
2012-06-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-temperature gold metallization for ZnO nanowire device on a SiC substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729802
10.1063/1.4729802
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