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Millisecond annealing for advanced doping of dirty-silicon solar cells
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10.1063/1.4729812
/content/aip/journal/jap/111/12/10.1063/1.4729812
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729812
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Figures

Image of FIG. 1.
FIG. 1.

μ-Raman spectra from implanted and annealed samples after different laser excitation. Annealing conditions: FA-900 °C for 30 min, RTA-1000 °C for 30 s, FLA-1000 °C for 3 or 20 ms with preheating at 400 °C for 1 min.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra obtained from phosphorous implanted with a fluence of 1.6 × 1015 cm−2 (a) and 3.8 × 1015 cm−2 (b) and annealed samples during 532 nm excitation with 200 mW power. Annealing conditions: FA-900 °C for 30 min, RTA-1000 °C for 30 s, FLA-1000 °C for 3 or 20 ms with preheating at 400 °C for 1 min.

Image of FIG. 3.
FIG. 3.

Sheet resistance measurements as a function of the annealing temperature of the P+ implanted and annealed mc-Si wafer with a fluence of 1.6 × 1015/cm2 (a) and 3.8 × 1015/cm2 (b). Results in blue area are sufficient for solar cell production.

Image of FIG. 4.
FIG. 4.

Average minority carrier diffusion length for different annealing conditions obtained from mc-Si implanted with a fluence of 1.6 × 1015 (a) and 3.8 × 1015 P+/cm2 (b) after line SPV scan. SPV scan of 3 × 3 cm2 samples implanted with a fluence of 1.6 × 1015 P+/cm2 and annealed at 900 °C for 30 min (c), 1000 °C for 30 s (d), and 1000 °C for 3 ms with 400 °C preheating for 1 min (e). Results in blue area are sufficient for solar cell production.

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/content/aip/journal/jap/111/12/10.1063/1.4729812
2012-06-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Millisecond annealing for advanced doping of dirty-silicon solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/111/12/10.1063/1.4729812
10.1063/1.4729812
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